Patents by Inventor Kuo-Chuan Kuo

Kuo-Chuan Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050186796
    Abstract: A method for gap filling between metal-metal lines is provided so that a first dielectric layer forms on a surface and side wall of a plurality of metal lines thereon which is called partially HDP deposition. Then, a portion of the first dielectric layer is removed by a high-density plasma with Ar/O2 to sputter so that a portion of side wall of metal lines is exposed. Afterwards, a second dielectric layer is formed on the first dielectric layer by a method of high density plasma oxide deposition so that the metal lines are completely covered.
    Type: Application
    Filed: February 24, 2004
    Publication date: August 25, 2005
    Inventors: Ping-Wei Lin, Chao-Sheng Chiang, Kuo-Chuan Kuo