Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1?xGa1?yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0<x+y?0.1, 0?m?3, and 0<x, 0?y, or 0?x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×1015˜6×1019 cm?3.

Abstract: Disclosed is a bonding structure, including a heat dissipation substrate, a eutectic layer on the heat dissipation substrate, and a copper layer on the eutectic layer. The thermal dissipation substrate includes aluminum oxide, aluminum nitride, or zirconium oxide. The eutectic layer includes aluminum oxide, aluminum nitride, or zirconium oxide doped with zinc, tin, indium, or combinations thereof.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.

Abstract: A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein to the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1 O.

Abstract: A solar cell device is provided, including a transparent substrate, a composite transparent conductive layer disposed over the transparent substrate, a photovoltaic element formed over the composite transparent conductive layer, and an electrode layer disposed over the photovoltaic element. In one embodiment, the composite transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer sequentially stacked over the transparent substrate, and the first transparent conductive layer is made of lithium and fluorine-codoped tin oxide and the second transparent conductive layer is made of a material selected from a group consisting of zinc oxide and titanium dioxide.

Abstract: Gas sensing material and gas sensor employing the same are provided. The gas sensing material includes an inorganic metal oxide and an organic polymer, wherein the organic polymer includes a repeat unit having the structure of wherein R1 and R2 are an independent alkyl group, alkoxy group, alkoxycarbonyl group, aryl group, heteroaryl group, or aliphatic group.

Abstract: A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1O.

Abstract: Ceramic blades and fabrication methods thereof. A ceramic blade comprises a ceramic body having two sides and an edge. A coating layer is applied on the two sides and the edge, wherein the ceramic body is formed using a scraper to create substantially flat surface and to prevent residual stress damage.

Abstract: A gas detection system used for detecting a concentration of a gas in a second environment based on a concentration of the gas in a first environment is provided. The gas detection system may include a gas detecting device having two detection module, a first dielectric layer a second dielectric layer and a programmed control module. The control module may detect the voltage outputted by the first detection module to obtain the concentration of the gas in the second environment, when the detected voltage is smaller than a predetermined value. The control module may output a voltage signal to the second detection module and may detect the steady state current corresponding to the voltage signal to obtain the concentration of the gas in the second environment corresponding to the steady state current.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.

Abstract: Ceramic blades and fabrication methods thereof. A ceramic blade comprises a ceramic body having two sides and an edge. A coating layer is applied on the two sides and the edge, wherein the ceramic body is formed using a scraper to create substantially flat surface and to prevent residual stress damage.

Abstract: A ceramic gad sensor comprises an upper electrode, a reaction layer, a lower electrode, and a ceramic cavity layer. The reaction layer is a ceramic substrate with one end provided with a reaction region that has a plurality of duct holes penetrating through the upper and lower surfaces of the substrate and a reaction film covering the upper surface of the reaction region. The reaction film is made of a detecting material and connected to the duct holes. There is also the detecting material provided inside the duct holes. The upper electrode is attached on the reaction film. The lower electrode is attached on the lower surface of the substrate and connected to the duct holes. The ceramic cavity layer is provided on the lower surface of the reaction layer with the lower electrode in between.