Abstract: The present invention relates to an aperture unit having an optical axis. The aperture unit includes a fixed portion, a guiding element, a first blade and a driving assembly. The guiding element is movably connected to the fixed portion, and the first blade is movably connected to the guiding element and the fixed portion. The driving assembly is disposed on the guiding element for driving the guiding element to move relative to the fixed portion in a first moving dimension. When the guiding element moves relative to the fixed portion in the first moving dimension, the first blade is driven by the guiding element to move relative to the fixed portion in a second moving dimension, and the first moving dimension and the second moving dimension are different.

Abstract: A method of forming a semiconductor structure includes forming a semiconductor fin over a substrate, forming a dummy gate stack over the semiconductor fin, depositing a dielectric layer over the dummy gate stack, and selectively etching the dielectric layer, such that a top portion and a bottom portion of the dielectric layer form a step profile. The method further includes removing portions of the dielectric layer to form a gate spacer and subsequently forming a source/drain feature in the semiconductor fin adjacent to the gate spacer.

Abstract: A method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. A conductive structure is formed in the first substrate. The method includes bonding the first substrate to a carrier. The method includes thinning down the first substrate. The method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. The method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. In addition, the method includes removing the carrier from the first substrate.

Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a main branch extending along a first direction on the substrate and a sub-branch extending along a second direction adjacent to the main branch. The semiconductor device also includes a first doped region overlapping the main branch and the sub-branch according to a top view and a second doped region overlapping the first doped region.

Abstract: An interconnect structure comprises a first dielectric layer, a first metal layer, a second dielectric layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer. The first metal layer comprises a first portion and a second portion spaced apart from the first portion. The second dielectric layer is over the first metal layer. The metal via has an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first metal layer, and a lower portion in the first dielectric layer. The second metal layer is over the metal via. From a top view the second metal layer comprises a metal line having longitudinal sides respectively set back from opposite sides of the first portion of the first metal layer.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first stack structure formed over a substrate, and the first stack structure includes a plurality of nanostructures that extend along a first direction. The semiconductor structure includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of nanostructures that extend along the first direction. The semiconductor structure includes a first gate structure formed over the first stack structure, and the first gate structure extends along a second direction. The semiconductor structure also includes a dielectric wall between the first stack structure and the second stack structure, and the dielectric wall includes a low-k dielectric material, and the dielectric wall is connected to the first stack structure and the second stack structure.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.

Abstract: An energy-saving and explosion-proof LED lamp comprises a lamp socket, an LED element, a lamp shade and a ring cap. The lamp socket includes a housing chamber, a jutting coupling portion with a housing compartment at the bottom thereof to hold a washer assembly inside to seal the bottom of the lamp socket. The LED element is fixedly held in the housing chamber. The lamp shade is made of tempered glass and wedged in the housing chamber, and has a jutting lens in the center and an annular end extended outwards from the perimeter of the lens. The ring cap has a coupling opening mating the lens and a press portion at the rim thereof. The ring cap is coupled on the lamp socket with the press portion covering the annular end, thus forms a flame propagation distance complying with explosion-proof certification.

Abstract: An LED lamp electrode structure aims to clamp an LED chip on the top end of a socket which has two electrode passages running therethrough. The electrode passages hold conductive media which have upper ends soldered to two electrodes of the LED chip to form electric connection and lower ends extended outside the bottom of the socket. The socket has a first thread portion at the lower side running through a holder which has a second thread portion to engage with a lens covering the LED chip. The conductive media are concealed inside the LED lamp. The LED lamp thus formed can be assembled and disassembled easily, and is safer and more aesthetic appealing.

Abstract: An LED lamp at least includes an LED lamp set and an adjustment assembly. The LED lamp set includes an LED set and a cooling set. The LED set includes at least one LED lamp element which is replaceable individually and a holder to hold the LED lamp element. The cooling set is fastened to the holder. The adjustment assembly includes an adjustment member and an adjustment holder that contain mating engaging portions engageable with each other. The adjustment member is coupled with the adjustment holder and the LED lamp set to provide adjustment function of light illumination angle. The invention further includes an assembly dock coupled with a plurality of LED lamp sets and adjustment assemblies according to requirements to enhance expandability and usability. The structure thus formed can be assembled and disassembled easily, and also provides greater expandability, replacement capability and practicality.

Abstract: An LED lamp at least includes an LED lamp set and an adjustment assembly. The LED lamp set includes an LED set and a cooling set. The LED set includes at least one LED lamp element which is replaceable individually and a holder to hold the LED lamp element. The cooling set is fastened to the holder. The adjustment assembly includes an adjustment member and an adjustment holder that contain mating engaging portions engageable with each other. The adjustment member is coupled with the adjustment holder and the LED lamp set to provide adjustment function of light illumination angle. The invention further includes an assembly dock coupled with a plurality of LED lamp sets and adjustment assemblies according to requirements to enhance expandability and usability. The structure thus formed can be assembled and disassembled easily, and also provides greater expandability, replacement capability and practicality.

Abstract: A LED heat sink and a method of manufacturing same are disclosed. The LED heat sink includes a holding zone bordered by one or more anchor portion of a higher elevation. The anchor zone has an upper side formed a compact stamping zone. The compact stamping zone is stamped forcefully through a mold in a diagonal direction towards the holding zone such that the material of the anchor zone is squeezed above the holding zone to form a latch hook to latch and press a LED lamp onto the holding zone so that the LED lamp is tightly in contact with the heat sink. Thus a forced transfer effect can be achieved to rapidly reduce the temperature of the LED lamp.

Abstract: An LED lamp electrode structure includes a jutting coupling portion at a lower side of an LED lamp and two electrode passages corresponding to and communicating with LED chip electrodes. The electrode passages are filled with silver paste or hold electric wires to establish electric connection with the chip electrodes. Thus wiring can be concealed and aesthetic appealing improves, and safety and practicality are enhanced.

Abstract: A method for forming random light pattern and a lamp therefor according to the present invention can control the brightness and the light pattern of the light according to the user's need, emphasis the boundary between light and dark, and avoid energy consumption caused by illuminating to undesired region. In the present invention, based on the counter-projection technology, the number, the positions and the angles of the lighting elements in the holder can be inversely calculated from the desired light pattern, so that the test time and the cost both can be reduced.

Abstract: A wide angle LED lamp structure provides a LED holder, which can be adjusted to have wide angle illumination range, embedded in a LED room of a heat dissipation base, cooperating with lamp cover and light reflection board, so that the illumination range becomes wider while maintaining the brightness even, and also the dazzle from LED lamp can be reduced. Besides, the LED holder can be replaced according to the different needs of illumination range, and the number of LED bulbs on the inclined plane of LED holder also can be varied in accordance with a user's demands, thereby enhancing the efficiency of each lamp.

Abstract: The LED lighting tube of the present invention utilizes a tubular heat dispersing structure and arranges the LED module in a light-tube manner, characterized in that the tubular heat dispersing structure can produce the airflow to increase the heat dispersing effect, and also, the closed structure thereof can prevent dust accumulation, so as to protect the LED module and extend the lifetime of the LED module. Besides, the present invention also employs plural electric controllers to control LED bulbs in multiple LED modules so as to achieve a section control of LED bulbs of different positions or different colors and satisfy multiple illumination requirements.

Abstract: The present invention discloses a tubular heat dispersing structure which utilizes tubular channel to contact with the heat source(s) and the heat conductor for restricting the heated air. When the flowing air flows into the channel, it is to produce the flowing naturally, and the heated air flows toward the opening rapidly. Therefore, the structure of the present invention can form air flowing actively for achieving the heat dispersing effect. Besides, the structure of the present invention also can have varied geometric shapes and sizes for corresponding to different shapes of different heat sources and heat conductors, so that a better stacked attachment therebetween can be achieved, thereby saving the cost of building the molds and corresponding to the heat dispersing requirements of various power.