Abstract: A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.

Abstract: The present invention discloses a method of manufacturing a combination heat sink having a best heat transfer efficiency and a combination heat sink made thereby. The present method comprises steps (a) to (d). In step (a), the plurality of radiating fins are piled up by sparing the radiating fins apart from each other in a substantially parallel manner with the bottom edges thereof being oriented in a same direction. In step (b), a recess is formed on the top surface of the common surface. In step (c), a heat-conductive brazing alloy is applied to the recess of the common surface. In step (d), the plurality of radiating fins are joined with the common base by seating the bottom edges of the fins onto the recess of the common base and heating the brazing alloy.