Patents by Inventor Kuo-Dong Huang

Kuo-Dong Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench silicon-on-insulator (SOI) DRAM cell
    Patent number: 7800111
    Abstract: The present invention relates to a trench silicon-on-insulator (SOI) dynamic random access memory (DRAM) cell and a method for making the same. A source and a drain are utilized to each connect to one of two semiconductor conductive units on an external side of a main body having a plurality of semiconductor conductive units, and the semiconductor conductive units are utilized to accumulate electric charges generated from the drain so as to decrease a threshold voltage. In addition, the DRAM cell only uses one field effect transistor (FET) device (1T), has characteristics of the conventional 1T-DRAM, and has higher integration density. Moreover, the process of the invention is simple, so the production cost can be reduced.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: September 21, 2010
    Assignee: National Sun Yat-Sen University
    Inventors: Jyi-Tsong Lin, Kuo-Dong Huang, Kao-Cheng Lin
  • TRENCH SOI-DRAM CELL AND METHOD FOR MAKING THE SAME
    Publication number: 20090101958
    Abstract: The present invention relates to a trench silicon-on-insulator (SOI) dynamic random access memory (DRAM) cell and a method for making the same. A source and a drain are utilized to each connect to one of two semiconductor conductive units on an external side of a main body having a plurality of semiconductor conductive units, and the semiconductor conductive units are utilized to accumulate electric charges generated from the drain so as to decrease a threshold voltage. In addition, the DRAM cell only uses one field effect transistor (FET) device (1T), has characteristics of the conventional 1T-DRAM, and has higher integration density. Moreover, the process of the invention is simple, so the production cost can be reduced.
    Type: Application
    Filed: October 22, 2008
    Publication date: April 23, 2009
    Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
    Inventors: Jyi-Tsong LIN, Kuo-Dong HUANG, Kao-Cheng LIN