Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A wide-band gap semiconductor device and a method of manufacturing the same are provided. The wide-band gap semiconductor device of the disclosure includes a substrate, an epitaxial layer, an array of merged PN junction Schottky (MPS) diode, and an edge termination area surrounding the array of MPS diode. The epitaxial layer includes a first plane, a second plane, and trenches between the first plane and the second plane. The array of MPS diode is formed in the first plane of the epitaxial layer. The edge termination area includes a floating ring region having floating rings formed in the second plane of the epitaxial layer, and a transition region between the floating ring region and the array of MPS diode. The transition region includes a PIN diode formed in the plurality of trenches and on the epitaxial layer between the trenches.

Abstract: An optical module is disclosed. The optical module includes a carrier, an optical emitter disposed over the carrier, and a monitor disposed over the carrier and configured to adjust a property of a first light emitted from the optical emitter.

Abstract: A merged PiN Schottky (MPS) diode includes a substrate, a first epitaxial layer of a first conductivity type, doped regions of a second conductivity type, a second epitaxial layer of the first conductivity type, and a Schottky metal layer. The first epitaxial layer is disposed on the first surface of the substrate. The doped regions are disposed in a surface of the first epitaxial layer, wherein the doped regions consist of first portions and second portions, the first portions are electrically floating, and the second portions are electrically connected to a top metal. The second epitaxial layer is disposed on the surface of the first epitaxial layer, wherein trenches are formed in the second epitaxial layer to expose the second portions of the doped regions. The Schottky metal layer is conformally deposited on the second epitaxial layer and the exposed second portions of the doped regions.

Abstract: A control method of a driving mechanism is provided, including: the driving mechanism provides a first electrical signal from a control assembly to the driving mechanism to move the movable portion into an initial position relative to the fixed portion, wherein the control assembly includes a control unit and a position sensing unit; the status signal of an inertia sensing unit is read; the control unit sends the status signal to the control unit to calculate a target position; the control unit provides a second electrical signal to the driving assembly according to the target position for driving the driving assembly; a position signal is sent from the position sensing unit to the control unit; the control unit provides a third electric signal to the driving assembly to drive the driving assembly according the position signal.

Abstract: A wide-band gap semiconductor device and a method of manufacturing the same are provided. The wide-band gap semiconductor device of the disclosure includes a substrate, an epitaxial layer, an array of merged PN junction Schottky (MPS) diode, and an edge termination area surrounding the array of MPS diode. The epitaxial layer includes a first plane, a second plane, and trenches between the first plane and the second plane. The array of MPS diode is formed in the first plane of the epitaxial layer. The edge termination area includes a floating ring region having floating rings formed in the second plane of the epitaxial layer, and a transition region between the floating ring region and the array of MPS diode. The transition region includes a PIN diode formed in the plurality of trenches and on the epitaxial layer between the trenches.

Abstract: An electronic device and a temperature detection device thereof are provided. The temperature detection device includes a differential stage circuit and an output stage circuit. The differential stage circuit includes a first differential end and a second differential end, and includes a cross-coupled transistor element, a first resistor and a second transistor. The cross-coupled transistor element receives a first voltage. The first resistor is coupled between the first differential end and a second voltage, and the first resistor is poly-silicon resistor. The second resistor is coupled between the second differential end and the second voltage, and the second resistor is a silicon carbide diffusion resistor. The output stage circuit generates a driving voltage according to a first control voltage on the first differential end and a second control voltage on the second differential end.

Abstract: A driving voltage generating device includes a temperature detector, a controlling circuitry, a voltage generator, and an output stage circuitry. The temperature detector is coupled to a control terminal of a power transistor and is configured to generate temperature detection information by detecting an ambient temperature. The controlling circuitry is coupled to the temperature detector and generates an activation signal by determining whether the ambient temperature is abnormal according to the temperature detection information. The voltage generator generates an operation power according to the activation signal. The output stage circuitry is coupled to the voltage generator, generates a driving voltage according to the operation power, and provides the driving voltage to the control terminal of the power transistor.

Abstract: An electronic device and a temperature detection device thereof are provided. The temperature detection device includes a first resistor, a second resistor, and an operation circuit. The first resistor and the second resistor are coupled in series between a detection end and a first voltage. The first resistor and the second resistor divide a detection voltage on the detection end to generate a monitoring voltage. The operation circuit compares the monitoring voltage with a plurality of reference voltages to generate a plurality of comparison results. The operation circuit performs an operation on the comparison results to generate detection temperature information. The first resistor is a poly-silicon resistor and the second resistor is a silicon carbon (SiC) diffusion resistor.

Abstract: A temperature sensing device includes a resistor string and a control circuitry. The resistor string includes a variable resistor, a first resistor, and a second resistor which are coupled in series with each other. The resistor string is coupled between a sensing end and a reference ground voltage. The first resistor and the second resistor are coupled to a monitoring end to provide a monitoring voltage. The control circuitry compares the monitoring voltage with a plurality of reference voltages to generate sensing temperature information, and generate adjustment information according to the sensing temperature information. The control circuitry adjusts a resistance provided by the variable resistor according to the adjustment information. The first resistor is a polysilicon resistor, and the second resistor is a silicon carbide diffusion resistor.

Abstract: An optical module is disclosed. The optical module includes a carrier, an optical emitter disposed over the carrier, and a monitor disposed over the carrier and configured to adjust a property of a first light emitted from the optical emitter.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.

Abstract: A method and an apparatus for testing a dialogue platform, and a storage medium are proposed. The specific solution is that: creating at least one simulation test instance, the simulation test instance comprises a plurality of test task information, each test task information comprises test numbers, ringing simulation data, and call simulation data; sending the test numbers to the dialogue platform to start a test; sending the ringing simulation data to the dialogue platform, to receive task states fed back by the dialogue platform; sending the call simulation data to the dialogue platform, to receive dialogue data fed back by the dialogue platform; and performing a dialogue test on the dialogue platform based on the test tasks, the task states corresponding to the test tasks, and the dialogue data.

Abstract: A power converter including: an output unit outputs a converted voltage; a transformer includes a first primary wiring, second primary wiring, and a secondary wiring; a first switch unit is coupled between first primary wiring and a second node; a delay unit is coupled to a control terminal of first switch unit; a first control unit generates a first control signal according to the converted voltage to control ON/OFF state of the first switch unit via the delay unit; the processing unit, coupled between the input voltage and the first node, receives, stores induced power of first induced voltage and releases the stored energy; and the second control unit generates a second control signal to control ON/OFF state of a second switch unit of processing unit to control receiving or releasing the energy according to the input voltage and induced power of first primary wiring.

Abstract: A power converter including: an output unit outputs a converted voltage; a transformer includes a first primary wiring, second primary wiring, and a secondary wiring; a first switch unit is coupled between first primary wiring and a second node; a delay unit is coupled to a control terminal of first switch unit; a first control unit generates a first control signal according to the converted voltage to control ON/OFF state of the first switch unit via the delay unit; the processing unit, coupled between the input voltage and the first node, receives, stores induced power of first induced voltage and releases the stored energy; and the second control unit generates a second control signal to control ON/OFF state of a second switch unit of processing unit to control receiving or releasing the energy according to the input voltage and induced power of first primary wiring.

Abstract: A manufacturing method of a magnetic element includes the following steps: forming a block including a central post and at least one lateral post with magneto-conductive materials; cutting the block along a first plane passing through the central and lateral posts to form a first half body and a second half body; combining the first half body with the second half body to form a first air gap between the central post of the first half body and the central post of the second half body and a second air gap between the lateral post of the first half body and the lateral post of the second half body; and cutting or grinding the combined first half body and second half body along a second plane passing through the central post and the lateral post to form a third half body including the first and second air gaps.

Abstract: A rectifier, including: a first and a second input terminal, a first output terminal and at least one rectifying circuit. Each rectifying circuit including: a switching circuit including a transistor, and a driving circuit. The driving circuit is coupled to the switching circuit and controls a switching status of the switching circuit, and includes a totem-pole circuit and an input transistor. The totem-pole circuit includes an input terminal and an output terminal coupled to the transistor. The input transistor is coupled between the totem-pole circuit and the switching circuit. The at least one rectifying circuit includes a first and a second rectifying circuit. The transistors of the first rectifying circuit and the second rectifying circuit are coupled to the first output terminal. The input transistors of the first rectifying circuit and the second rectifying circuit are coupled to the first input terminal and the second input terminal, respectively.

Abstract: A power adapter including a main circuit board and an auxiliary circuit board is provided. The main circuit board has a first surface and a second surface opposite to each other, and the first surface of the main circuit board is configured with a transformer and a first capacitor. The auxiliary circuit board has a first surface and a second surface opposite to each other, and the first surface of the auxiliary circuit board is configured with an input rectifier filter circuit, where the auxiliary circuit board is disposed in parallel above the main circuit board, and the input rectifier filter circuit of the auxiliary circuit board is electrically connected to the first capacitor of the main circuit board. Under a condition of same electrical parameters and dimensions, the volume of the power adapter of the invention is only a half of that of the existing power adapter, which satisfies a demand for miniaturization of the electronic devices.

Abstract: A snubber circuit is provided. The snubber circuit includes a transistor structure and a first capacitor. The transistor structure includes a chip package and two pins. The chip package includes a transistor die and a molding compound encapsulating the transistor die. A first pin of the two pins is electrically connected to a first bonding pad and a second bonding pad of the transistor die, and a second pin of the two pins is electrically connected to a third bonding pad of the transistor die. The first pin or the second pin of the transistor structure is electrically connected to a terminal of the first capacitor.