Abstract: A semiconductor device is provided. The semiconductor device includes first channel nanostructures in a first device region, second channel nanostructures in a second device region, a dielectric fin at a boundary between the first device region and the second device region, a high-k dielectric layer surrounding each of the first channel nanostructures and each of the second channel nanostructures and over the dielectric fin, a first work function layer surrounding each of the first channel nanostructures and over the high-k dielectric layer and a second work function layer surrounding each of the second channel nanostructures and over the high-k dielectric layer and the first work function layer. The first work function layer fully fills spaces between the first channel nanostructures and has an edge located above the dielectric fin. The second work function layer fully fills spaces between the second channel nanostructures.

Abstract: A method of forming a semiconductor device includes forming a first dielectric layer over a first channel region in a first region and over a second channel region in a second region; introducing a first dipole element into the first dielectric layer in the first region to form a first dipole-containing gate dielectric layer in the first region; forming a second dielectric layer over the first dipole-containing gate dielectric layer; introducing fluorine into the second dielectric layer to form a first fluorine-containing gate dielectric layer over the first dipole-containing gate dielectric layer; and forming a gate electrode over the first fluorine-containing gate dielectric layer.

Abstract: A method includes forming a first gate dielectric, a second gate dielectric, and a third gate dielectric over a first semiconductor region, a second semiconductor region, and a third semiconductor region, respectively. The method further includes depositing a first lanthanum-containing layer overlapping the first gate dielectric, and depositing a second lanthanum-containing layer overlapping the second gate dielectric. The second lanthanum-containing layer is thinner than the first lanthanum-containing layer. An anneal process is then performed to drive lanthanum in the first lanthanum-containing layer and the second lanthanum-containing layer into the first gate dielectric and the second gate dielectric, respectively. During the anneal process, the third gate dielectric is free from lanthanum-containing layers thereon.

Abstract: A fan frame includes a housing, a shaft seat, a curved rib, a plurality of first ribs, and a plurality of second ribs. The shaft seat is disposed at the center of the housing. The curved rib is disposed between the housing and the shaft seat. The first ribs extend through the curved rib and connect the shaft seat to the housing, and the second ribs connect the curved rib to the shaft seat.

Abstract: A fan frame includes a housing, a shaft seat, a curved rib, a plurality of first ribs, and a plurality of second ribs. The shaft seat is disposed at the center of the housing. The curved rib is disposed between the housing and the shaft seat. The first ribs extend through the curved rib and connect the shaft seat to the housing, and the second ribs connect the curved rib to the shaft seat.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a gate structure formed over nanostructures. The gate structure includes a gate dielectric layer, and a fill layer over the gate dielectric layer. The semiconductor device structure includes a protection layer formed over the fill layer, and a gate spacer layer formed adjacent to the gate structure. The semiconductor device structure includes an insulating layer formed over the protection layer, and the insulating layer is in direct contact with the gate spacer layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and a gate structure formed over the fin structure. The gate structure includes a gate dielectric layer, a first conductive layer over the first conductive layer. The gate structure includes a fill layer over the first conductive layer. The semiconductor device structure includes a protection layer formed over the fill layer, and a top surface of the gate dielectric layer is lower than a top surface of the protection layer and higher than a top surface of the first conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes forming first and second channel layers over a substrate, forming first source/drain features over the first and second channel layers, forming a gate dielectric layer wrapping around the first and second channel layers, forming a first work function layer wrapping around the gate dielectric layer, forming a hard mask layer wrapping around the first work function layer, removing portions of the hard mask layer and the first work function layer, removing the hard mask layer and the first work function layer wrapping around the second channel layer, removing the hard mask layer wrapping around the first channel layer, forming a second work function layer wrapping around the first work function layer and the second channel layer, forming a metal material between the second work function layer, and forming second source/drain features under the first and second channel layers.

Abstract: A semiconductor device is provided. The semiconductor device includes first channel nanostructures in a first device region, second channel nanostructures in a second device region, a dielectric fin at a boundary between the first device region and the second device region, a high-k dielectric layer surrounding each of the first channel nanostructures and each of the second channel nanostructures and over the dielectric fin, a first work function layer surrounding each of the first channel nanostructures and over the high-k dielectric layer and a second work function layer surrounding each of the second channel nanostructures and over the high-k dielectric layer and the first work function layer. The first work functional layer fully fills spaces between the first channel nanostructures and has an edge located above the dielectric fin. The second work functional layer fully fills spaces between the second channel nanostructures.

Abstract: A heat dissipation structure is provided and includes a heat dissipation body and an adjustment channel. A carrying area and an active area adjacent to the carrying area are defined on a surface of the heat dissipation body, the carrying area is used for applying a first heat dissipation material thereonto, and the adjustment channel is formed in the active area, where one end of the adjustment channel communicates with the outside of the heat dissipation structure, and the other end communicates with the carrying area. Therefore, when the heat dissipation body is coupled to the electronic component by the first heat dissipation material, the adjustment channel can adjust a volume of the first heat dissipation material.

Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: A method for forming a semiconductor device structure includes forming nanostructures in a first region and a second region over a substrate. The method also includes forming a gate dielectric layer surrounding the nanostructures. The method also includes forming dummy structures between the nanostructures. The method also includes forming a dielectric layer over the nanostructures. The method also includes forming a dielectric structure between the nanostructures in the first region and nanostructures in the second region. The method also includes removing the dummy structures in the first region. The method also includes depositing a first work function layer over the nanostructures. The method also includes removing the first work function layer and the dummy structures in the second region. The method also includes depositing a second work function layer over the nanostructures.

Abstract: A beverage cooling device includes an outer bucket, an inner container unit, and a drive unit. The inner container unit is disposed in the outer bucket, is adapted to receive a bottled alcoholic beverage therein, and cooperates with the outer bucket to confine a cooling space that surrounds the inner container unit and that is adapted for receiving a cooling medium, such as ice cubes or ice water. The drive unit drives rotation of the inner container unit relative to the outer bucket.

Abstract: An angle-adjustable rotating device includes a mounting part disposed on a peripheral wall of a base member. A drive unit includes a motor and a drive shaft driven by the motor. A mounting seat is sleeved on the drive shaft, and is formed with an engaging member. A control mechanism is associated with the drive shaft in such a manner that rotation direction of the drive shaft is reversed when resistance to rotation of the drive shaft is greater than a predetermined amount of torque of the motor. A resistance providing member is mounted adjustably on the mounting part, and is engageable with the engaging member so as to provide resistance to rotation of the drive shaft.

Abstract: A humidifier includes a humidifier housing, a fan, and a water wheel device. The humidifier housing includes a lower base member that defines a liquid-containing compartment, and an upper cover member mounted on the lower base member and formed with a vapor outlet. The fan is mounted in the upper cover member, and is operable so as to generate air currents that flow through the vapor outlet. The water wheel device includes a horizontal wheel axle mounted rotatably in the humidifier housing, a drive motor for driving axial rotation of the wheel axle, and a plurality of disc members mounted spacedly and co-rotatably on the wheel axle. Each of the disc members has a lower disc portion extending into the liquid-containing compartment, and an upper disc portion disposed under and adjacent to the fan.

Abstract: An angle-adjustable rotating device includes a mounting part disposed on a peripheral wall of a base member. A drive unit includes a motor and a drive shaft driven by the motor. A mounting seat is sleeved on the drive shaft, and is formed with an engaging member. A control mechanism is associated with the drive shaft in such a manner that rotation direction of the drive shaft is reversed when resistance to rotation of the drive shaft is greater than a predetermined amount of torque of the motor. A resistance providing member is mounted adjustably on the mounting part, and is engageable with the engaging member so as to provide resistance to rotation of the drive shaft.