Patents by Inventor Kuo Fu LEE

Kuo Fu LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11928416
    Abstract: A method of process technology assessment is provided. The method includes: defining a scope of the process technology assessment, the scope comprising an original process technology and a first process technology; modeling a first object in an integrated circuit into a resistance domain and a capacitance domain; generating a first resistance scaling factor and a first capacitance scaling factor based on the modeling, the original process technology, and the first process technology; and utilizing, by an electronic design automation (EDA) tool, the first resistance scaling factor and the first capacitance scaling factor for simulation of the integrated circuit.
    Type: Grant
    Filed: March 1, 2023
    Date of Patent: March 12, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Chih Ou, Kuo-Fu Lee, Wen-Hao Chen, Keh-Jeng Chang, Hsiang-Ho Chang
  • Publication number: 20230205974
    Abstract: A method of process technology assessment is provided. The method includes: defining a scope of the process technology assessment, the scope comprising an original process technology and a first process technology; modeling a first object in an integrated circuit into a resistance domain and a capacitance domain; generating a first resistance scaling factor and a first capacitance scaling factor based on the modeling, the original process technology, and the first process technology; and utilizing, by an electronic design automation (EDA) tool, the first resistance scaling factor and the first capacitance scaling factor for simulation of the integrated circuit.
    Type: Application
    Filed: March 1, 2023
    Publication date: June 29, 2023
    Inventors: Hung-Chih Ou, Kuo-Fu Lee, Wen-Hao Chen, Keh-Jeng Chang, Hsiang-Ho Chang
  • Patent number: 11604915
    Abstract: A method of process technology assessment is provided. The method includes: defining a scope of the process technology assessment, the scope comprising an original process technology and a first process technology; modeling a first object in an integrated circuit into a resistance domain and a capacitance domain; generating a first resistance scaling factor and a first capacitance scaling factor based on the modeling, the original process technology, and the first process technology; and utilizing, by an electronic design automation (EDA) tool, the first resistance scaling factor and the first capacitance scaling factor for simulation of the integrated circuit.
    Type: Grant
    Filed: April 15, 2021
    Date of Patent: March 14, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Hung-Chih Ou, Kuo-Fu Lee, Wen-Hao Chen, Keh-Jeng Chang, Hsiang-Ho Chang
  • Publication number: 20220335196
    Abstract: A method of process technology assessment is provided. The method includes: defining a scope of the process technology assessment, the scope comprising an original process technology and a first process technology; modeling a first object in an integrated circuit into a resistance domain and a capacitance domain; generating a first resistance scaling factor and a first capacitance scaling factor based on the modeling, the original process technology, and the first process technology; and utilizing, by an electronic design automation (EDA) tool, the first resistance scaling factor and the first capacitance scaling factor for simulation of the integrated circuit.
    Type: Application
    Filed: April 15, 2021
    Publication date: October 20, 2022
    Inventors: Hung-Chih Ou, Kuo-Fu Lee, Wen-Hao Chen, Keh-Jeng Chang, Hsiang-Ho Chang
  • Publication number: 20220147678
    Abstract: A method for capacitance extraction includes: performing a first capacitance extraction on one or more first regions of a semiconductor layout; performing a second capacitance extraction on one or more second regions of the semiconductor layout, a resolution of the second capacitance extraction being less than a resolution of the first capacitance extraction; constructing a netlist for the semiconductor layout based on results of the first capacitance extraction and of the second capacitance extraction; and modifying the semiconductor layout based on the netlist. The modified semiconductor layout is used to fabricate an integrated circuit.
    Type: Application
    Filed: June 30, 2021
    Publication date: May 12, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo Fu LEE, Ching Yang YEN, Ke-Ying SU, Chau-Wen WEI