Abstract: The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.

Abstract: A method includes forming a metallic feature, forming an etch stop layer over the metallic feature, implanting the metallic feature with a dopant, forming a dielectric layer over the etch stop layer, performing a first etching process to etch the dielectric layer and the etch stop layer to form a first opening, performing a second etching process to etch the metallic feature and to form a second opening in the metallic feature, wherein the second opening is joined with the first opening, and filling the first opening and the second opening with a metallic material to form a contact plug.

Abstract: A method of controlling a feedback control system of a semiconductor process chemical fluid in a storage tank includes performing a fluid quality measurement of fluid by a spectrum analyzer positioned adjacent to a dispensing port of the storage tank, and determining whether a variation in fluid quality measurement of the fluid is within an acceptable range. The method further includes in response to a variation in fluid quality measurement that is not within the acceptable range of variation in fluid quality measurement, automatically adjusting a configurable parameter of the semiconductor process chemical fluid in the storage tank to set the variation in fluid quality measurement of the fluid within the acceptable range.

Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.

Abstract: A package on package structure includes a first package, a plurality of conductive bumps, a second package and an underfill. The conductive bumps are disposed on a second surface of the first package and electrically connected to the first package. The second package is disposed on the second surface of the first package through the conductive bumps, and includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. A shortest distance from an upper surface of the encapsulating material to an upper surface of the semiconductor device is greater than or substantially equal to twice a thickness of the semiconductor device. The underfill is filled between the first package and the second package.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, the 3D IC comprises a first IC die comprising a first substrate, a first interconnect structure disposed over the first substrate, and a first through substrate via (TSV) disposed through the first substrate. The 3D IC further comprises a second IC die comprising a second substrate, a second interconnect structure disposed over the second substrate, and a second TSV disposed through the second substrate. The 3D IC further comprises a bonding structure arranged between back sides of the first IC die and the second IC die opposite to corresponding interconnect structures and bonding the first IC die and the second IC die. The bonding structure comprises conductive features disposed between and electrically connecting the first TSV and the second TSV.

Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A package on package structure includes a first package, a plurality of conductive bumps, a second package and an underfill. The conductive bumps are disposed on a second surface of the first package and electrically connected to the first package. The second package is disposed on the second surface of the first package through the conductive bumps, and includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. A shortest distance from an upper surface of the encapsulating material to an upper surface of the semiconductor device is greater than or substantially equal to twice a thickness of the semiconductor device. The underfill is filled between the first package and the second package.

Abstract: A power module package structure includes a first substrate and a power component. The first substrate includes at least one conductive layer on a surface thereof. The power component includes a first chip and a first spacer. The first chip has at least one electrode. The first spacer in a heat dissipation space between the first substrate and the first chip includes an insulating heat dissipation layer in the heat dissipation space and multiple vertical conductive connectors, each of the vertical conductive connectors penetrates the insulating heat dissipation layer. The insulating heat dissipation layer surrounds the vertical conductive connectors and electrically isolates the vertical conductive connectors. The vertical conductive connector includes two opposite ends, one end electrically connected to the conductive layer, and the other end electrically connected to the electrode to form a conductive path and a heat dissipation path between the first chip and the first substrate.

Abstract: The tool connector includes a socket having a receiving space and a through hole communicating the receiving space, a sliding member slidably received in the receiving space, a positioning member received in the receiving space, and a hook member. A funnel-shaped opening is formed at an end of the receiving space. The sliding member is connected to the socket with an end via a first elastic member, and the other end is for a tool bit to abut against. The positioning member is selectively inserted into the through hole. An end of the hook member is connected to the sliding member, and the other end has a hook portion for grasp the tool bit. When the positioning member is moved inward and the sliding member is moved toward the funnel-shaped opening, the hook portion is swingable in the funnel-shaped opening to release the tool bit.

Abstract: The tool connector includes a socket having a receiving space and a through hole communicating the receiving space, a sliding member slidably received in the receiving space, a positioning member received in the receiving space, and a hook member. A funnel-shaped opening is formed at an end of the receiving space. The sliding member is connected to the socket with an end via a first elastic member, and the other end is for a tool bit to abut against. The positioning member is selectively inserted into the through hole. An end of the hook member is connected to the sliding member, and the other end has a hook portion for grasp the tool bit. When the positioning member is moved inward and the sliding member is moved toward the funnel-shaped opening, the hook portion is swingable in the funnel-shaped opening to release the tool bit.

Abstract: A screwdriver tool contains: a connecting rod and a magnetic assembly. The connecting rod includes a tool segment, a threaded section, and a neck section. The magnetic assembly includes a slidable sleeve, a magnetic attracting element accommodated in a front end thereof, and an inserting notch formed therein, wherein a diameter of the inserting notch is greater than a diameter of the threaded section, and the slidable sleeve further has a screwing section formed on a rear end of the inserting notch to screw with the threaded section, a length of the screwing section is less than that of the neck section, the threaded section of the connecting rod is inserted into the inserting notch of the slidable sleeve, and the screwing section of the slidable sleeve is fitted with the neck section of the connecting sleeve.

Abstract: A tool coupling structure comprises a first post member including a fitting end disposed on one end thereof and a polygonal cavity mounted on another end thereof; the cavity including a hole formed on an outer wall thereof, and the hole including a biasing element installed therein; a second post member including a coupling end fixed on one end thereof and a polygonal sphere knob formed on another end thereof to be fitted to the cavity of the fist post member, and the sphere knob including an elastic engaging member fixed on a peripheral side thereof in response to the hole of the first post member to be retained in the hole.

Abstract: A tool coupling structure comprises a first post member including a fitting end disposed on one end thereof and a polygonal cavity mounted on another end thereof; the cavity including a hole formed on an outer wall thereof, and the hole including a biasing element installed therein; a second post member including a coupling end fixed on one end thereof and a polygonal sphere knob formed on another end thereof to be fitted to the cavity of the fist post member, and the sphere knob including an elastic engaging member fixed on a peripheral side thereof in response to the hole of the first post member to be retained in the hole.