Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: A manufacturing process of a carrier is disclosed. First, a first substrate is provided. A circuit layer having a number of contacts is formed on a surface of the first substrate. Then, a solder mask is formed on the circuit layer and exposes the contacts. Next, a second substrate having an opening is bonded to the surface of the first substrate to form a carrier, and the opening exposes the solder mask and the contacts of the first substrate. Since the contacts are located within the opening, a circuit layout space can be increased, and a chip disposed in the opening can be electrically connected to the contacts directly, so as to reduce the thickness of a chip package structure. Besides, the carrier is formed by laminating the first and the second substrates. Hence, the manufacturing process of the carrier is simplified and yield of the carrier is promoted.

Abstract: A manufacturing process of a carrier is disclosed. First, a first substrate is provided. A circuit layer having a number of contacts is formed on a surface of the first substrate. Then, a solder mask is formed on the circuit layer and exposes the contacts. Next, a second substrate having an opening is bonded to the surface of the first substrate to form a carrier, and the opening exposes the solder mask and the contacts of the first substrate. Since the contacts are located within the opening, a circuit layout space can be increased, and a chip disposed in the opening can be electrically connected to the contacts directly, so as to reduce the thickness of a chip package structure. Besides, the carrier is formed by laminating the first and the second substrates. Hence, the manufacturing process of the carrier is simplified and yield of the carrier is promoted.