Abstract: The electronic device monitoring method, provided by the present invention, comprises the following steps: obtaining a coordinate information and an additional information of each electronic device by the master electronic device; generating a display position table by the master electronic device according to the coordinate information and the additional information of each electronic device; generating a barcode pattern, indicating a monitoring website and a plurality of display parameters, by the master electronic device according to the display position table in real time; reading the barcode pattern by a mobile device to connect to a browsing interface related to the monitoring website associated with a monitoring website address; displaying a device pattern corresponding to each electronic device by the browsing interface according to a plurality of display parameters; wherein the barcode pattern indicates the monitoring website address and the plurality of display parameters.

Abstract: A light-emitting diode structure has: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with electrical polarity different from that of the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode comprises a contact area and an extension area, and the contact area has a first surface corresponding to the first semiconductor layer and the extension area has a second surface corresponding to the first semiconductor layer, wherein a roughness of the first surface is different from that of the second surface, and the reflectivity of the first surface is smaller than that of the second surface.

Abstract: A method for fabricating a semiconductor device is described. A transistor is formed on a substrate, including a gate structure on the substrate, a spacer on the sidewall of the gate structure and S/D regions in the substrate beside the gate structure. A liner layer is formed over the substrate conformally covering the transistor, and a portion of the liner layer is removed to form a liner spacer on the spacer of the transistor. A stress layer is formed over the substrate covering the transistor and the liner spacer.