Abstract: A decoding method, a memory control circuit unit, and a memory storage device are provided. The method includes: configuring a plurality of read voltage categories, wherein the read voltage categories respectively have a plurality of representative read voltage sets; reading a first physical programming unit according to the representative read voltage sets and executing a decoding operation to obtain a plurality of decoded information; choosing a first read voltage category according to the plurality of decoded information; and reading the first physical programming unit according to the first read voltage sets in the first read voltage category and executing the decoding operation.

Abstract: A decoding method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the invention. The method includes: reading at least one memory cells by using at least one read voltage level to obtain a codeword; performing a parity check operation on the codeword by an error checking and correcting circuit to generate a syndrome sum corresponding to the codeword; and dynamically adjusting a first parameter used by the error checking and correcting circuit in a first decoding operation based on whether the syndrome sum is less than a first threshold value and performing the first decoding operation on the codeword by the error checking and correcting circuit by using the first parameter.

Abstract: A decoding method for a rewritable non-volatile memory module is provided. The method includes reading data from a plurality of memory cells of the rewritable non-volatile memory module according to a first voltage, wherein the data includes a user data string and an error checking and correcting code set. The method also includes decoding at least part of sub data units i the user data string according to a first decoding algorithm to obtain a plurality of decoded sub data units. The method further includes restoring a value of the corrected bit to an original bit value if a corrected bit in the decoded sub data units matches a reliability condition.

Abstract: A decoding method, a memory storage device and a memory control circuit unit are provided. The method includes: arranging a plurality of first voltage levels which are used continuously for reading first data from a plurality of first memory cells according to a first wear degree of the first memory cells; decoding the first data which is read by the arranged first voltage levels; arranging a plurality of second voltage levels which are used continuously for reading second data from the first memory cells according to a second wear degree of the first memory cells, wherein the first wear degree of the first memory cells is different from the second wear degree of the first memory cells, and a voltage gap between any two neighboring voltages levels among the first voltage levels is different from a voltage gap between any two neighboring voltage levels among the second voltage levels; and decoding the second data which is read by the arranged second voltage levels.

Abstract: A decoding method is provided according to an exemplary embodiment of the invention. The decoding method includes: reading a data set from at least two physical units of a rewritable non-volatile memory module by using at least one read voltage level; performing a first-type decoding operation for first data by using the data set and recording decoding information of the first-type decoding operation if the data set conforms to a default condition; adjusting reliability information corresponding to the first data according to the recorded decoding information, and the reliability information is not used in the first-type decoding operation, and the adjusted reliability information is different from default reliability information corresponding to the first data; and performing a second-type decoding operation for the first data according to the adjusted reliability information.

Abstract: A decoding method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the invention. The method includes: reading at least one memory cells by using at least one read voltage level to obtain a codeword; performing a parity check operation on the codeword by an error checking and correcting circuit to generate a syndrome sum corresponding to the codeword; and dynamically adjusting a first parameter used by the error checking and correcting circuit in a first decoding operation based on whether the syndrome sum is less than a first threshold value and performing the first decoding operation on the codeword by the error checking and correcting circuit by using the first parameter.

Abstract: A decoding method is provided according to an exemplary embodiment of the invention. The decoding method includes: reading a data set from at least two physical units of a rewritable non-volatile memory module by using at least one read voltage level; performing a first-type decoding operation for first data by using the data set and recording decoding information of the first-type decoding operation if the data set conforms to a default condition; adjusting reliability information corresponding to the first data according to the recorded decoding information, and the reliability information is not used in the first-type decoding operation, and the adjusted reliability information is different from default reliability information corresponding to the first data; and performing a second-type decoding operation for the first data according to the adjusted reliability information.

Abstract: In one exemplary embodiment, the decoding method includes: reading first data from a plurality of first memory cells of a rewritable non-volatile memory module; performing a first decoding operation on the first data based on a first decoding condition; and performing a second decoding operation on the first data based on a second decoding condition if the first decoding operation conforms to a first default status, where a strict level of locating an error bit in the first data based on the second decoding condition is higher than a strict level of locating the error bit in the first data based on the first decoding condition. Therefore, a decoding efficiency of a memory storage device can be improved.

Abstract: A data processing method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first write data; performing a first stage encoding operation of a low-density parity-check (LDPC) code on the first write data and generating first transition data; performing a second stage encoding operation of the LDPC code on the first transition data and generating a first error correcting code (ECC); receiving second write data; and performing the first stage encoding operation of the LDPC code on the second write data during a time period of performing the second stage encoding operation of the LDPC code on the first transition data. Accordingly, the data processing efficiency corresponding to the LDPC code can be improved.

Abstract: A decoding method, a memory storage device and a memory control circuit unit. The method includes: reading a plurality of bits from a plurality of first memory cells; performing a first decoding operation on the bits according to first reliability information; and performing a second decoding operation on the bits according to second reliability information if the first decoding operation fails and meets a default condition, and the second reliability information is different from the first reliability information, and a correction ability of the second reliability information for a first type error of the bits is higher than a correction ability of the first reliability information for the first type error. In addition, the first type error is generated by performing a specific programming operation on the first memory cells based on error data.

Abstract: A decoding method, a memory storage device and a memory control circuit unit. The method includes: reading a plurality of bits from a plurality of first memory cells; performing a first decoding operation on the bits according to first reliability information; and performing a second decoding operation on the bits according to second reliability information if the first decoding operation fails and meets a default condition, and the second reliability information is different from the first reliability information, and a correction ability of the second reliability information for a first type error of the bits is higher than a correction ability of the first reliability information for the first type error. In addition, the first type error is generated by performing a specific programming operation on the first memory cells based on error data.

Abstract: An error processing method for a rewritable non-volatile memory module, a memory storage device and a memory controlling circuit unit are provided. The rewritable non-volatile memory module includes a plurality of memory cells. The error processing method includes: sending a first read command sequence for reading a plurality of bits from the memory cells; performing a first decoding on the bits; determining whether each error belongs to a first type error or a second type error if the bits have at least one error; recording related information of a first error in the at least one error if the first error belongs to the first type error; and not recording the related information of the first error if the first error belongs to the second type error. Accordingly, errors with particular type may be processed suitably.

Abstract: A data reading method for a rewritable non-volatile memory module is provided. The method includes performing an error correction decoding operation on an user data stream according to an error checking and correcting (ECC) code to generate a first decoded data stream; searching uncorrectable sub-data units from decoded sub-data units of the first decoded data stream; selecting a target sub-data unit from the uncorrectable sub-data units; adjusting the target sub-data unit in the first decoded data stream to generate an adjusted user data stream; and re-performing the error correction decoding operation on the adjusted user data stream to generate a second decoded data stream; if the second decoded data stream has no error bit, transmitting the second decoded data stream as a corrected data stream to a host system.

Abstract: In one exemplary embodiment, the decoding method includes: reading first data from a plurality of first memory cells of a rewritable non-volatile memory module; performing a first decoding operation on the first data based on a first decoding condition; and performing a second decoding operation on the first data based on a second decoding condition if the first decoding operation conforms to a first default status, where a strict level of locating an error bit in the first data based on the second decoding condition is higher than a strict level of locating the error bit in the first data based on the first decoding condition. Therefore, a decoding efficiency of a memory storage device can be improved.

Abstract: A data processing method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first write data; performing a first stage encoding operation of a low-density parity-check (LDPC) code on the first write data and generating first transition data; performing a second stage encoding operation of the LDPC code on the first transition data and generating a first error correcting code (ECC); receiving second write data; and performing the first stage encoding operation of the LDPC code on the second write data during a time period of performing the second stage encoding operation of the LDPC code on the first transition data. Accordingly, the data processing efficiency corresponding to the LDPC code can be improved.

Abstract: A decoding method, a memory storage device and a memory control circuit unit are provided. The method includes: reading data from a plurality of first memory cells of a rewritable non-volatile memory module; estimating an error bit occurrence rate of the data before performing a first decoding process on the data; and performing the first decoding process on the data by using a first decoding parameter according to the estimated error bit occurrence rate, wherein the first decoding parameter corresponds to a strict level for locating an error bit in the first decoding process. As a result, a decoding efficiency of the memory storage device can be improved.

Abstract: A decoding method for a rewritable non-volatile memory module is provided. The method includes reading data from a plurality of memory cells of the rewritable non-volatile memory module according to a first voltage, wherein the data includes a user data string and an error checking and correcting code set. The method also includes decoding at least part of sub data units i the user data string according to a first decoding algorithm to obtain a plurality of decoded sub data units. The method further includes restoring a value of the corrected bit to an original bit value if a corrected bit in the decoded sub data units matches a reliability condition.

Abstract: A data reading method for a rewritable non-volatile memory module is provided. The method includes performing an error correction decoding operation on an user data stream according to an error checking and correcting (ECC) code to generate a first decoded data stream; searching uncorrectable sub-data units from decoded sub-data units of the first decoded data stream; selecting a target sub-data unit from the uncorrectable sub-data units; adjusting the target sub-data unit in the first decoded data stream to generate an adjusted user data stream; and re-performing the error correction decoding operation on the adjusted user data stream to generate a second decoded data stream; if the second decoded data stream has no error bit, transmitting the second decoded data stream as a corrected data stream to a host system.

Abstract: A read voltage level estimating method, a memory storage device and a memory control circuit unit are provided. The method includes: reading a first region of a rewritable non-volatile memory module according to a first read voltage level to obtain a first encoding unit which belongs to a block code; performing a first decoding procedure on the first encoding unit and recording first decoding information; reading the first region according to a second read voltage level to obtain a second encoding unit which belongs to the block code; performing a second decoding procedure on the second encoding unit and recording second decoding information; and estimating and obtaining a third read voltage level according to the first decoding information and the second decoding information. Accordingly, a management ability of the rewritable non-volatile memory module adopting the block code may be improved.

Abstract: A data reading method is provided. The data reading method includes receiving a read command from a host system; sending a first read command sequence to obtain a first data string from memory cells of a rewritable non-volatile memory module; performing a decoding procedure on the first data string to generate a decoded first data string; and, if there is an error bit in the decoded first data string, sending a second read command sequence to obtain a second data string from the memory cells, performing a logical operation on the decoded first data string and the second data string to obtain an adjusting data string, adjusting the decoded first data string according to the adjusting data string to obtain an adjusted first data string, and using a data string obtained after re-performing the decoding procedure on the adjusted first data string as the decoded first data string.