Patents by Inventor Kuo-Hsing Kao

Kuo-Hsing Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Line-tunneling tunnel field-effect transistor (TFET) and manufacturing method
    Patent number: 8629428
    Abstract: A tunnel field effect transistor (TFET) and method of making the same is provided. The TFET comprises a source-channel-drain structure and a gate electrode. The source region comprises a first source sub-region which is doped with a first doping profile with a dopant element of a first doping type having a first peak concentration and a second source sub-region close to a source-channel interface which is doped with a second doping profile with a second dopant element with the same doping type as the first dopant element and having a second peak concentration. The second peak concentration of the second doping profile is substantially higher than the maximum doping level of the first doping profile close to an interface between the first and the second source sub-regions.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: January 14, 2014
    Assignees: IMEC, Katholieke Universiteit Leuven, K.U. Leuven R&D
    Inventors: Anne S. Verhulst, Kuo-Hsing Kao
  • LINE-TUNNELING TUNNEL FIELD-EFFECT TRANSISTOR (TFET) AND MANUFACTURING METHOD
    Publication number: 20120298959
    Abstract: A tunnel field effect transistor (TFET) and method of making the same is provided. The TFET comprises a source-channel-drain structure and a gat electrode. The source region comprises a first source sub-region which is doped with a first doping profile with a dopant element of a first doping type having a first peak concentration and a second source sub-region close to a source-channel interface which is doped with a second doping profile with a second dopant element with the same doping type as the first dopant element and having a second peak concentration. The second peak concentration of the second doping profile is substantially higher than the maximum doping level of the first doping profile close to an interface between the first and the second source sub-regions.
    Type: Application
    Filed: May 17, 2012
    Publication date: November 29, 2012
    Applicants: Katholieke Universiteit Leuven, K.U.LEUVEN R&D, IMEC
    Inventors: Anne S. Verhulst, Kuo-Hsing Kao