Patents by Inventor Kuo-Hsing Tseng

Kuo-Hsing Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170025443
    Abstract: A method manufacturing a thin film transistor is provided. A gate, a first insulation layer covering the gate, a semiconductor layer over the gate, and a first photoresist pattern are sequentially formed on a substrate. The semiconductor layer is patterned into a channel layer by using the first photoresist pattern as a mask and the first photoresist pattern is subsequently shrunken to remain a portion of the first photoresist pattern on the channel layer. A conductive material layer covering the remained portion of the first photoresist pattern, the channel layer and the first insulation layer is patterned by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion. The second photoresist pattern and the remained portion are removed by performing a stripping process to expose the channel layer between the source and the drain.
    Type: Application
    Filed: July 24, 2015
    Publication date: January 26, 2017
    Inventors: Der-Chun Wu, Shin-Chuan Chiang, Yu-Hsien Chen, Po-Lung Chen, Yi-Hsien Lin, Cheng-Jung Yang, Kuo-Hsing Tseng
  • Patent number: 9543330
    Abstract: A method manufacturing a thin film transistor is provided. A gate, a first insulation layer covering the gate, a semiconductor layer over the gate, and a first photoresist pattern are sequentially formed on a substrate. The semiconductor layer is patterned into a channel layer by using the first photoresist pattern as a mask and the first photoresist pattern is subsequently shrunken to remain a portion of the first photoresist pattern on the channel layer. A conductive material layer covering the remained portion of the first photoresist pattern, the channel layer and the first insulation layer is patterned by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion. The second photoresist pattern and the remained portion are removed by performing a stripping process to expose the channel layer between the source and the drain.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: January 10, 2017
    Assignee: Chunghwa Picture Tubes, Ltd.
    Inventors: Der-Chun Wu, Shin-Chuan Chiang, Yu-Hsien Chen, Po-Lung Chen, Yi-Hsien Lin, Cheng-Jung Yang, Kuo-Hsing Tseng