Abstract: A substrate assembly is provided, including a first substrate, an active element layer, a plurality of first electrodes, a circuit substrate, and a plurality of second electrodes. The active element layer is disposed on the first substrate. The plurality of first electrodes are disposed on the first substrate and arranged along a first direction. The circuit substrate is partially overlapping the first substrate in a vertical projection direction. The plurality of second electrodes are disposed on the circuit substrate. A distance between the edge of one of the plurality of second electrodes and the edge of one of the plurality of first electrodes is greater than zero in the first direction, and a width of the one of the plurality of first electrodes is different from a width of the one of the plurality of second electrodes.

Abstract: A multi-inlet arc chamber typically used in the emission of electrons from a plasma-forming gas in a plasma flood system. The chamber includes multiple gas inlet openings for flow of the gas into the chamber to increase turbulent flow of the gas in the chamber. Over time, the turbulent-flowing gas tends to contact various points rather than the same point or points on a filament in the chamber, as electrical current flows through the filament and electrons are emitted from the gas typically for the neutralization of positive charges on an ion-implanted semiconductor wafer substrate. Consequently, the filament is less susceptible to burnout and breakage and has an extended lifetime.

Abstract: A multi-inlet arc chamber typically used in the emission of electrons from a plasma-forming gas in a plasma flood system. The chamber includes multiple gas inlet openings for flow of the gas into the chamber to increase turbulent flow of the gas in the chamber. Over time, the turbulent-flowing gas tends to contact various points rather than the same point or points on a filament in the chamber, as electrical current flows through the filament and electrons are emitted from the gas typically for the neutralization of positive charges on an ion-implanted semiconductor wafer substrate. Consequently, the filament is less susceptible to burnout and breakage and has an extended lifetime.