Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: A package structure and method for fabricating the same are provided. The package structure includes a substrate, a semiconductor package, a side dam, a flexible thermal conductor and a first heat sink. The substrate has a first board surface. The semiconductor package has an upper surface, a lower surface and a side surface, and the semiconductor package is disposed on the first board surface. The side dam is formed on the first board to surround a first accommodating space for accommodating the semiconductor package. The side dam has a height that is higher than a height of the upper surface. The flexible heat conductor is formed on the upper surface. The first heat sink is disposed on the side dam. The first heat sink, the side dam and the semiconductor package jointly define a second accommodation space to confine the flexible heat conductor.

Abstract: A method includes forming a transistor, which includes forming a dummy gate stack over a semiconductor region, and forming an Inter-Layer Dielectric (ILD). The dummy gate stack is in the ILD, and the ILD covers a source/drain region in the semiconductor region. The method further includes removing the dummy gate stack to form a trench in the first ILD, forming a low-k gate spacer in the trench, forming a replacement gate dielectric extending into the trench, forming a metal layer to fill the trench, and performing a planarization to remove excess portions of the replacement gate dielectric and the metal layer to form a gate dielectric and a metal gate, respectively. A source region and a drain region are then formed on opposite sides of the metal gate.

Abstract: A package structure and a method for fabricating the same are provided. The package structure includes a substrate, a semiconductor package and an adhesive body. The substrate has a first board surface and a second board surface. The semiconductor package has an upper surface and a lower surface, is disposed on the first board surface and electrically connected to the substrate through pins, and has a first vertical projection on the first board surface. An adhesive groove is disposed on the first board surface and is located in at least one portion of the first vertical projection and a periphery of the first vertical projection. The adhesive body is disposed in the adhesive groove, and protrudes to contact the lower surface, so as to fix the semiconductor package. The adhesive groove does not overlap with the pins, and the adhesive body does not contact the pins.

Abstract: A package structure and a method for fabricating the same are provided. The package structure includes a substrate, a semiconductor package, a first adhesive and a second adhesive. The substrate has a first board surface and a second board surface, and a second region surrounds a first region on the first board surface. The semiconductor package has an upper surface, a lower surface, and a side surface, and is disposed on the first board surface. The first adhesive is formed on the first board surface, in the second region and in a portion of the first region adjacent to the second region. The second adhesive is formed between the side surface and the first adhesive and contacts the side surface and the first adhesive, and the first adhesive and the second adhesive together form a pier adhesive.

Abstract: A semiconductor wafer is provided, which comprises at least a first die and a second die, which are grouped into different regions according to a wafer map. A saw and assembly process is performed, which packages the first dies and the second dies into a first packaged unit and a second packaged unit, respectively. A first burn-in test on the first packaged unit is performed for a first testing period to eliminate dies that fail at infancy. A second burn-in test on the second package unit is performed for a second time period to eliminate dies that fail at infancy. The first time period is shorter than the second time period.