Abstract: Semiconductor structures and methods of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a first transistor. The first transistor includes a first gate structure wrapping around a plurality of first nanostructures disposed over a substrate, a first source/drain feature electrically coupled to a topmost nanostructure of the plurality of first nanostructures and isolated from a bottommost nanostructure of the plurality of first nanostructures by a first dielectric layer, and a first semiconductor layer disposed between the substrate and the first source/drain feature, wherein the first source/drain feature is in direct contact with a top surface of the first semiconductor layer.

Abstract: A device includes: a substrate having a semiconductor fin; a stack of semiconductor channels on the substrate and positioned over the fin; a gate structure wrapping around the semiconductor channels; a source/drain abutting the semiconductor channels; an inner spacer positioned between the stack of semiconductor channels and the fin; an undoped semiconductor layer vertically adjacent the source/drain and laterally adjacent the fin; and an isolation structure that laterally surrounds the undoped semiconductor layer, the isolation structure being between the source/drain and the inner spacer.

Abstract: A device includes: a substrate; a stack of semiconductor channels on the substrate; a gate structure wrapping around the semiconductor channels; a source/drain region abutting the semiconductor channels; and a hybrid structure between the source/drain region and the substrate. The hybrid structure includes: a first semiconductor layer under the source/drain region; and an isolation region extending vertically from an upper surface of the first semiconductor layer to a level above a bottom surface of the first semiconductor layer.

Abstract: A semiconductor structure includes an isolation structure in a substrate, a metal gate structure over the substrate and a portion of the isolation structure, a spacer at sidewalls of the metal gate structure, epitaxial source/drain structure at two sides of the metal gate structure, and a protection layer over the isolation structure. The protection layer and the spacer include a same material.

Abstract: A method for manufacturing a semiconductor device includes: forming an etch stop layer with an opening; forming a barrier layer on the etch stop layer to fill the opening, the barrier layer including a layer portion disposed on the etch stop layer and an insert portion protruding from the layer portion to be inserted into the opening of the etch stop layer; forming a bottom electrode layer on the layer portion of the barrier layer opposite to the etch stop layer; forming a ferroelectric layer on the bottom electrode layer opposite to the barrier layer; and forming a top electrode layer on the ferroelectric layer opposite to the bottom electrode layer.

Abstract: A method for fabricating a semiconductor device is provided. The method includes depositing a ferroelectric layer over the substrate; performing a first ionized physical deposition process to deposit a top electrode layer over the ferroelectric layer; patterning the top electrode layer into a top electrode; and patterning the ferroelectric layer to into a ferroelectric element below the top electrode.

Abstract: A semiconductor structure includes a ferroelectric layer and a semiconductor layer. Thee ferroelectric layer has a first surface and a second surface opposite to the first surface. The semiconductor layer is formed on one of the first surface and the second surface.

Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.

Abstract: A common cathode electrode structure for vertical LED pixel package, includes a package carrier, vertical LED chips, a conductive column, an insulating isolation support, and a common cathode metal thin film layer. The vertical LED chips are arranged above package carrier, the package carrier includes anodes and a common cathode penetrating therethrough to be external connection point. The anodes are respectively corresponded and electrically connected to P electrodes of the vertical LED chips, and the conductive column is electrically connected to common cathode and N electrodes of vertical LED chips. The common cathode metal thin-film layer is formed on vertical LED chips, conductive column and insulating isolation support to electrically conduct the conductive column and the N electrodes. The anodes and common cathode are in the same plane, which can meet the requirements for embodying SMT for small-spacing LED display module.

Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip including forming a ferroelectric layer over a bottom electrode layer, forming a top electrode layer over the ferroelectric layer, performing a first removal process to remove peripheral portions of the bottom electrode layer, the ferroelectric layer, and the top electrode layer, and performing a second removal process using a second etch that is selective to the bottom electrode layer and the top electrode layer to remove portions of the bottom electrode layer and the top electrode layer, so that after the second removal process the ferroelectric layer has a surface that protrudes past a surface of the bottom electrode layer and the top electrode layer.

Abstract: A device includes a substrate. A first channel region of a first transistor overlies the substrate and a source/drain region is in contact with the first channel region. The source/drain region is adjacent to the first channel region along a first direction, and the source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A dielectric fin structure is adjacent to the source/drain region along a second direction that is transverse to the first direction, and the dielectric fin structure has an upper surface, a lower surface, and an intermediate surface that is disposed between the upper and lower surfaces. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region and on the intermediate surface of the dielectric fin structure.

Abstract: Disclosed is a readily releasable locking device for guarding a movement of an angularly movable flat board relative to an elongated shell. The readily releasable locking device includes a latch member operable to retain or release a guided rod that can be retained at various positions to permit the flat board to be tilted at different angles. Also disclosed is a readily releasable locking device for guarding against a movement of the elongated shell that is linearly movable relative to a non-movable tubular core member.

Abstract: Disclosed is a readily releasable locking device for guarding a movement of an angularly movable flat board relative to an elongated shell. The readily releasable locking device includes a latch member operable to retain or release a guided rod that can be retained at various positions to permit the flat board to be tilted at different angles. Also disclosed is a readily releasable locking device for guarding against a movement of the elongated shell that is linearly movable relative to a non-movable tubular core member.

Abstract: Disclosed is a readily releasable locking device for guarding a movement of an angularly movable flat board relative to an elongated shell. The readily releasable locking device includes a latch member operable to retain or release a guided rod that can be retained at various positions to permit the flat board to be tilted at different angles. Also disclosed is a readily releasable locking device for guarding against a movement of the elongated shell that is linearly movable relative to a non-movable tubular core member.

Abstract: Disclosed is a readily releasable locking device for guarding a movement of an angularly movable flat board relative to an elongated shell. The readily releasable locking device includes a latch member operable to retain or release a guided rod that can be retained at various positions to permit the flat board to be tilted at different angles. Also disclosed is a readily releasable locking device for guarding against a movement of the elongated shell that is linearly movable relative to a non-movable tubular core member.