Patents by Inventor Kuo Hung Hsieh

Kuo Hung Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140175526
    Abstract: A semiconductor device where at least one of a portion of the first metal layer that extends from the source contact, a portion of the second metal layer that extends from the source contact, a portion of the first metal layer that extends from the drain contact, and a portion of the second metal layer that extends from the drain contact is configured to lie above a portion of or even all of the gate. Methods of fabricating and using such a semiconductor device are also provided.
    Type: Application
    Filed: December 20, 2012
    Publication date: June 26, 2014
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Kuo Hung Hsieh, Meng Shien Hsieh, Yin Fu Huang, Miao Chun Chung