Abstract: A gas mixing method to enhance plasma includes: providing a reaction chamber; wherein the reaction chamber includes an accommodating space and the reaction chamber includes a top opening connected to the accommodating space; providing an adapter plate, and fixing the adapter plate to the reaction chamber to be arranged corresponding to the top opening; wherein the adapter plate further includes a window area communicating both sides of the adapter plate; providing a target disposed on top of the adapter plate to seal the top opening; premixing a plasma gas and an auxiliary gas into a gas mixture, and introducing the gas mixture into the accommodating space; and providing a biasing field to the accommodating space.

Abstract: A particle prevention method in chamber includes providing a shielding ring, wherein the shielding ring includes a first side wall, a second side wall, and a bottom, the second side wall is parallel to the first side wall, and the bottom is connected to the first side wall, and the second side wall to form an annular groove area; connecting the first side wall to the reaction chamber with the first side wall extending toward an upper portion of a accommodating space of a reaction chamber; fixing a first deflector plate to the first side wall, wherein the first deflector plate extends obliquely toward the bottom, and the first deflector plate is located above the aperture; and fixing a second deflector plate to the second side wall, wherein the second deflector plate is located above the first deflector plate, and the second deflector plate extends obliquely toward the bottom.

Abstract: A gas mixing method to enhance plasma includes: providing a reaction chamber; wherein the reaction chamber includes an accommodating space and the reaction chamber includes a top opening connected to the accommodating space; providing an adapter plate, and fixing the adapter plate to the reaction chamber to be arranged corresponding to the top opening; wherein the adapter plate further includes a window area communicating both sides of the adapter plate; providing a target disposed on top of the adapter plate to seal the top opening; premixing a plasma gas and an auxiliary gas into a gas mixture, and introducing the gas mixture into the accommodating space; and providing a biasing field to the accommodating space.

Abstract: A polishing head for a chemical mechanical polishing process is provided. The polishing head includes an inner circle part and an outer circle part. The outer circle part is a ring-like structure that is connected to the inner circle part. The inner circle part and the outer circle part are an integrated structure. There is a level difference between the respective surfaces of the outer circle part and the inner circle part. Further, the surface of the outer circle part is higher than that of the inner circle part.

Abstract: A dual damascene process for forming semiconductor devices containing a copper interconnect and a low-K dielectric layer on a wafer which allows the copper interconnect to be formed subsequent to the formation of the low-K dielectric layer while preventing the low-K dielectric layer from being degraded by a subsequent plasma etching.

Abstract: A dual damascene process for forming semiconductor devices containing a copper interconnect and a low-K dielectric layer on a wafer which allows the copper interconnect to be formed subsequent to the formation of the low-K dielectric layer while preventing the low-K dielectric layer from being degraded by a subsequent plasma etching.

Abstract: A polishing method using a dynamic feedback recipe is disclosed. The polishing method includes steps of providing a first recipe, polishing a first wafer according to the first recipe, measuring the first wafer to obtain a first determined data from the first wafer, calculating a second recipe according to a specific equation and the first determined data, and replacing the first recipe with the second recipe and polishing a second wafer according to the second recipe.