Abstract: A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has a photonic crystal structure. The insulating layer is disposed on an upper surface and a sidewall surface of the first platform, and on an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, the active layer, and at least a portion of the first waveguiding layer. The first electrode is on the insulating layer and the second electrode is connected to the outer surface of the substrate and arranged to form an opening for laser output.

Abstract: A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a light-transmissive conducting layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has multiple holes to form a photonic crystal structure. The insulating layer is over an upper surface and a sidewall surface of the first platform, and over an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, and the active layer. The light-transmissive conducting layer connects to the photonic crystal structure through an aperture of the insulating layer. The first electrode has an opening corresponding to the aperture. The second electrode is under the substrate.

Abstract: A surface-emitting laser including a cladding layer, an active region, a first grating, a plurality of second gratings, a first electrode, and a second electrode is provided. The active region is disposed on the cladding layer. The first grating is disposed on the active region. The second gratings are disposed on the active region and separately distributed among the first grating. A diffraction order of the first grating is different from a diffraction order of the second gratings. The first electrode is electrically connected to the cladding layer. The second electrode covers at least the first grating.

Abstract: An electrically pumped photonic-crystal surface-emitting lasers with optical detector comprises plurality of air holes, by the variation of position and size proportion form a photonic crystal having main structure and sub structure, and produces an optical detection signal by light guiding proportion of the light guiding tunnel, further have power proportion of the laser by reading the strength of the optical detection signal, so the automatic power control circuit can feedback the power proportion for controlling the surface-emitting laser.

Abstract: An electrically pumped photonic-crystal surface-emitting lasers with optical detector comprises plurality of air holes, by the variation of position and size proportion form a photonic crystal having main structure and sub structure, and produces an optical detection signal by light guiding proportion of the light guiding tunnel, further have power proportion of the laser by reading the strength of the optical detection signal, so the automatic power control circuit can feedback the power proportion for controlling the surface-emitting laser.

Abstract: An electrically pumped surface-emitting photonic crystal laser has a second surface of a first metal electrode arranged on a photonic crystal structure, a first electrical currents confining structure and a filled layer, and a substrate having a top surface arranged on a first surface of the first metal electrode for the photonic crystal structure to be inversely disposed. The photonic crystal laser has its epitaxy structure etched from above to fabricate the photonic crystal to allow laser beams to be reflected by the first metal electrode due to the inverse disposition and to be emitted from a rear surface of the epitaxy structure.

Abstract: An electrically pumped surface-emitting photonic crystal laser includes an electric currents confinement structure arranged on a photonic crystal structure and an active layer with an opening, a transparent conducting layer arranged on the electric currents confinement structure and covering the photonic crystal structure, a metal anode arranged on the transparent conducting layer with an aperture. The photonic crystal laser has its epitaxy structure etched from above to fabricate the photonic crystal to allow laser beams to pass through with conductivity for the purpose of electrically pumping a quantum structure without complex technologies of wafer fusion bonding or epitaxial regrowth. Thereby the laser beams can be emitted from a front surface of the epitaxy structure with a narrow divergence angle.

Abstract: A multiwavelength quantum dot laser element is provided. A perpendicular stack of quantum dot active regions with different light emitting wavelengths is employed, and thickness, material composition, and quantum dot size of each of the quantum dot active regions are modulated, so as to form various laser oscillation conditions. When a current applied to the quantum dot laser element is larger than the start-oscillation current condition, lasers with different wavelengths are simultaneously obtained in each of the quantum dot active regions, thereby achieving the application of the multiwavelength quantum dot laser element.

Abstract: A multiwavelength semiconductor laser array and a method of fabricating the same are provided. Laser resonators having stacked quantum dot active regions of different emission wavelengths are utilized together with a fabricating process to change the length of each laser resonator or that of an upper electrode layer to generate different laser oscillation conditions, such that each of the laser resonators generates a single-wavelength band laser in a specific quantum dot active region, thereby achieving a multiwavelength semiconductor laser array capable of generating multiple laser wavelengths.

Abstract: A multiwavelength quantum dot laser element is provided. A perpendicular stack of quantum dot active regions with different light emitting wavelengths is employed, and thickness, material composition, and quantum dot size of each of the quantum dot active regions are modulated, so as to form various laser oscillation conditions. When a current applied to the quantum dot laser element is larger than the start-oscillation current condition, lasers with different wavelengths are simultaneously obtained in each of the quantum dot active regions, thereby achieving the application of the multiwavelength quantum dot laser element.

Abstract: A multiwavelength semiconductor laser array and a method of fabricating the same are provided. Laser resonators having stacked quantum dot active regions of different emission wavelengths are utilized together with a fabricating process to change the length of each laser resonator or that of an upper electrode layer to generate different laser oscillation conditions, such that each of the laser resonators generates a single-wavelength band laser in a specific quantum dot active region, thereby achieving a multiwavelength semiconductor laser array capable of generating multiple laser wavelengths.

Abstract: A vertical-stacked coupled quantum-dot vertical cavity surface emitting laser includes a semiconductor substrate, a lower distributed Bragg reflector, a first wave guide layer, an emitting layer, a second wave guide layer and an upper distributed Bragg reflector. The emitting layer is formed by multiple Quantum-Dot Vertically Stacked layers, which are spaced less than 20 nm.