Patents by Inventor Kuo-Ko Chen

Kuo-Ko Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE HAVING TWO-WAY CONDUCTION CHARACTERISTICS, AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT INCORPORATING THE SAME
    Publication number: 20140197521
    Abstract: A semiconductor device includes an n-type first doped region for receiving an external voltage, an n-type second doped region and a p-type third doped regions all formed in a p-type substrate, and is configured to have a first threshold voltage for forward conduction between the first and second doped regions, and a second threshold voltage for forward conduction between the first and third doped regions. A current is drained by flowing through the first doped region, the substrate and the second doped region if the external voltage is greater than the first threshold voltage or by flowing through the third doped region, the substrate and the first doped region if the external voltage is less than the second threshold voltage.
    Type: Application
    Filed: January 16, 2013
    Publication date: July 17, 2014
    Applicant: ILI TECHNOLOGY CORPORATION
    Inventors: Wei-Yao LIN, Chung-Wei WANG, Yu-Lun LU, Kuo-Ko CHEN
  • Semiconductor device having two-way conduction characteristics, and electrostatic discharge protection circuit incorporating the same
    Patent number: 8779519
    Abstract: A semiconductor device includes an n-type first doped region for receiving an external voltage, an n-type second doped region and a p-type third doped regions all formed in a p-type substrate, and is configured to have a first threshold voltage for forward conduction between the first and second doped regions, and a second threshold voltage for forward conduction between the first and third doped regions. A current is drained by flowing through the first doped region, the substrate and the second doped region if the external voltage is greater than the first threshold voltage or by flowing through the third doped region, the substrate and the first doped region if the external voltage is less than the second threshold voltage.
    Type: Grant
    Filed: January 16, 2013
    Date of Patent: July 15, 2014
    Assignee: Ili Technology Corporation
    Inventors: Wei-Yao Lin, Chung-Wei Wang, Yu-Lun Lu, Kuo-Ko Chen