Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: A wafer assessment apparatus and method for a single wafer machine. The wafer assessment apparatus includes a pedestal, a movable supporting device, a weight measurement device, a signal transmission device and a control unit. The movable supporting device is disposed in the pedestal to support a wafer. The weight measurement device is disposed on the movable supporting device to measure the weight of the wafer. The signal transmission device is electrically connected to the weight measurement device to output a wafer weight signal. The control unit is electrically connected to the signal transmission device to receive and process the wafer weight signal to determine if the wafer is positioned correctly and/or damaged.