Patents by Inventor Kuo-Li Lin

Kuo-Li Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR STRUCTURE WITH EXTENDED CONTACT STRUCTURE
    Publication number: 20240170537
    Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. In addition, the nanostructures includes channel regions and source/drain regions. The semiconductor structure further includes a gate structure vertically sandwiched the channel regions of the nanostructures and a contact wrapping around and vertically sandwiched between the source/drain regions of the nanostructures.
    Type: Application
    Filed: February 1, 2024
    Publication date: May 23, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-Chun LIN, Kuo-Hua PAN, Jhon-Jhy LIAW, Chao-Ching CHENG, Hung-Li CHIANG, Shih-Syuan HUANG, Tzu-Chiang CHEN, I-Sheng CHEN, Sai-Hooi YEONG
  • Interconnect structure and forming method thereof
    Patent number: 11955441
    Abstract: An interconnect structure comprises a first dielectric layer, a first metal layer, a second dielectric layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer. The first metal layer comprises a first portion and a second portion spaced apart from the first portion. The second dielectric layer is over the first metal layer. The metal via has an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first metal layer, and a lower portion in the first dielectric layer. The second metal layer is over the metal via. From a top view the second metal layer comprises a metal line having longitudinal sides respectively set back from opposite sides of the first portion of the first metal layer.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jian-Hong Lin, Kuo-Yen Liu, Hsin-Chun Chang, Tzu-Li Lee, Yu-Ching Lee, Yih-Ching Wang
  • Semiconductor structure with extended contact structure
    Patent number: 11923413
    Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.
    Type: Grant
    Filed: February 7, 2022
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-Chun Lin, Kuo-Hua Pan, Jhon-Jhy Liaw, Chao-Ching Cheng, Hung-Li Chiang, Shih-Syuan Huang, Tzu-Chiang Chen, I-Sheng Chen, Sai-Hooi Yeong
  • Flexible Tubular Packaging Bag and Method and Apparatus for Making the Same
    Publication number: 20090232425
    Abstract: An individual flexible tubular packaging bag for sanitary products includes a flexible bag body made from a flexible seamless tubular body of a heat-weldable material by heat-sealing two opposite ends of the seamless tubular body. The flexible bag body defines a receiving space that is adapted to receive the sanitary products, and has an access opening in spatial communication with the receiving space. A resealable flap is connected to the flexible bag body, and seals openably the access opening.
    Type: Application
    Filed: July 11, 2008
    Publication date: September 17, 2009
    Inventors: Jung-Chi Tai, Ho-Hsi Yang, Kuo-Li Lin, Chun-Meng Huang, Chien-Chung Su