Patents by Inventor Kuo-Lin Chu
Kuo-Lin Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145470Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: Lung-Kun CHU, Mao-Lin HUANG, Chung-Wei HSU, Jia-Ni YU, Kuo-Cheng CHIANG, Kuan-Lun CHENG, Chih-Hao WANG
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Patent number: 11961840Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.Type: GrantFiled: August 9, 2022Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Mao-Lin Huang, Lung-Kun Chu, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
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Publication number: 20240120313Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.Type: ApplicationFiled: December 18, 2023Publication date: April 11, 2024Inventors: Sheng-Yao YANG, Ling-Wei LI, Yu-Jui WU, Cheng-Lin HUANG, Chien-Chen LI, Lieh-Chuan CHEN, Che-Jung CHU, Kuo-Chio LIU
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Publication number: 20240120402Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.Type: ApplicationFiled: November 19, 2023Publication date: April 11, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jia-Ni YU, Kuo-Cheng CHIANG, Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Chun-Fu LU, Chih-Hao WANG, Kuan-Lun CHENG
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Publication number: 20240113195Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.Type: ApplicationFiled: February 22, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jia-Ni YU, Lung-Kun CHU, Chun-Fu LU, Chung-Wei HSU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
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Patent number: 11948987Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.Type: GrantFiled: September 9, 2020Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Lung-Kun Chu, Mao-Lin Huang, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11942377Abstract: A semiconductor device includes a semiconductor substrate; a plurality of channel regions, including a p-type channel region and an n-type channel region, disposed over the semiconductor substrate; and a gate structure. The gate structure includes a gate dielectric layer disposed over the plurality of channel regions and a work function metal (WFM) structure disposed over the gate dielectric layer. The WFM structure includes an n-type WFM layer over the n-type channel region and not over the p-type channel region and further includes a p-type WFM layer over both the n-type WFM layer and the p-type channel region. The gate structure further includes a fill metal layer disposed over the WFM structure and in direct contact with the p-type WFM layer.Type: GrantFiled: February 28, 2022Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Lung-Kun Chu, Mao-Lin Huang, Wei-Hao Wu, Kuo-Cheng Chiang
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Publication number: 20240096994Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.Type: ApplicationFiled: February 10, 2023Publication date: March 21, 2024Inventors: Lung-Kun CHU, Jia-Ni YU, Chun-Fu LU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
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Publication number: 20240096880Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.Type: ApplicationFiled: November 16, 2023Publication date: March 21, 2024Inventors: Mao-Lin Huang, Chih-Hao Wang, Kuo-Cheng Chiang, Jia-Ni Yu, Lung-Kun Chu, Chung-Wei Hsu
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Publication number: 20050133658Abstract: A crown-shaped fixture set for a tubular fixture device is described in the present invention, which comprises a pair of crown-shaped fixtures. The crown-shaped fixture is a disc with a crown portion. The center of the disc has an aperture. The crown portion of the fixture is shaped like a conoid. The bottom of the crown portion forms a plurality of positioning slots. Pluralities of tangential grooves corresponding to positioning slots are formed on the crown portion. Thus, the crown portion is capable of positioning and fixing paper tubes of various bore sizes, so that the paper tube can be reused and the contact area between the paper tube and the crown portion can be increased and stabilizes the rotation movement of the paper tube.Type: ApplicationFiled: February 2, 2004Publication date: June 23, 2005Applicant: Industrial Technology Research InstituteInventors: Yu-Cheng Chang, Hou-Peng Wan, Kuo-Lin Chu, Chia-Hsin Liu, Yau-Tsung Jeng