Abstract: A half-bridge circuit package structure includes a chip pad, a first metal island, a driving chip, an upper bridge switch, and a lower bridge switch. The driving chip includes a ground pad and a high side ground pad. The upper bridge switch includes a first enhancement mode transistor and a first depletion mode transistor. A drain pad of the first depletion mode transistor is electrically connected to the first metal island. The lower bridge switch includes a second enhancement mode transistor and a second depletion mode transistor. A source pad of the second depletion mode transistor is electrically connected to a drain pad of the second enhancement mode transistor. A drain pad of the second depletion mode transistor is electrically connected to the first metal island.

Abstract: A memory control circuit includes an access control circuit, a connection pad circuit, and a pad control circuit. The connection pad circuit includes a transceiver circuit and a receiver circuit. The transceiver circuit and the receiver circuit are connected to a memory through an external pad. The pad control circuit is connected between the access control circuit and the receiver circuit. The pad control circuit executes a read command, and receives data from the memory. The pad control circuit executes a write command or receives the data, the pad control circuit turns off the output of the receiver circuit. The access control circuit executes a power save command that the receiver circuit enters a power save mode. The pad control circuit decreases an operating current of the receiver circuit to minimum and forces an internal signal level of the receiver circuit. The receiver circuit enters a deep power save state.

Abstract: A half-bridge circuit driving chip includes a control module, a level shift unit, a programming module, and a driving unit. The control module is configured to receive an enabling signal and an input signal, and output a set signal and a reset signal. The level shift unit is configured to receive the set signal and the reset signal, and output a relative set signal and a relative reset signal. When the enabling signal is at a low level, the half-bridge circuit driving chip is in a programming mode, and the programming module performs decoding according to the relative set signal and the relative reset signal, and outputs a circuit parameter. When the enabling signal is at a high level, the half-bridge circuit driving chip is in a working mode, and the driving unit generates an output signal according to the relative set signal and the relative reset signal.

Abstract: A reference potential generating circuit includes at least one upper-potential selection switch, at least one lower-potential selection switch, a resistor string and at least one multiplexer. Each upper-potential selection switch receives an upper-voltage signal, and one of the upper-potential selection switches is turned on. Each lower-potential selection switch receives a lower-voltage signal, and one of the lower-potential selection switches is turned on. The resistor string is coupled between the upper-potential selection switch and the lower-potential selection switch. The multiplexer includes a plurality of input ends and an output end. The input ends are coupled to ends of the resistors one to one, and the output end of one of the multiplexers outputs a reference potential signal. A control method for the aforementioned reference potential generating circuit is further provided here.

Abstract: A trajectory correction method includes: determining whether there is a collision zone according to an initial path and a predicted moving path of a dynamic object; forming a first repulsive object at the corresponding collision zone of an original potential field map in response to determining that there is the collision zone, to obtain a modified potential field map; and obtaining an obstacle avoidance path according to the modified potential field map.

Abstract: A method of route planning and an electronic device using the same method are provided. The method includes: obtaining multiple route points, and generating a route set according to the route points, wherein a first route in the route set includes a first order corresponding to the route points, wherein the first order includes a first route point and a second route point adjacent to the first route point; obtaining multiple weights respectively corresponding to the route points; calculating a first score of the first route according to a distance or time between the first route point and the second route point and the weights, and selecting the first route from the route set as a recommended route according to the first score; and outputting the recommended route.

Abstract: A trajectory predicting method and a computing system for trajectory prediction are provided. In the method, feature extraction is respectively performed on past trajectories of multiple target objects through an encoder to generate first trajectory information of the target objects. A pooling process is performed on the first trajectory information of the target objects to generate second trajectory information of the target objects. The second trajectory information of each target object includes location relationships relative to other target objects. Third trajectory information is obtained from the past trajectories of the target objects. The third trajectory information includes a moving direction, scene information, and/or a moving mode. The predicted trajectories of the target objects are generated according to the second trajectory information and the third trajectory information through a decoder. Accordingly, the accuracy of prediction can be improved.

Abstract: A driver chip for a half-bridge circuit includes a drive module and a programming module. The drive module is configured to receive an enabling signal and at least one input signal. The drive module outputs a high-side output signal to a high-side switch and a low-side output signal to a low-side switch, respectively. The programming module includes a decoding unit configured to receive the enabling signal and the at least one input signal. The programming module further includes a preset unit coupled to the decoding unit. The decoding unit outputs decoded data to the preset unit, and the preset unit outputs a circuit parameter.

Abstract: An object identification method includes: generating a tracking sample and an adversarial sample; training a teacher model according to the tracking sample; and initializing a student model according to the teacher model. The student model adjusts a plurality of parameters according to the teacher model and the adversarial sample, in response to the vector difference between the output result of the student model and the output result of the teacher model being lower than the learning threshold, the student model is deemed to have completed training, and the student model is extracted as an object identification model.

Abstract: A method of increasing the resistivity of a silicon carbide wafer includes providing a silicon carbide wafer with a first resistivity, and applying a microwave to treat the silicon carbide wafer. The treated silicon carbide wafer has a second resistivity. The second resistivity is higher than the first resistivity. The microwave treated silicon carbide wafer can be applied in a high-frequency device.

Abstract: A half-bridge circuit package structure includes a chip pad, a first metal island, a driving chip, an upper bridge switch, and a lower bridge switch. The driving chip includes a ground pad and a high side ground pad. The upper bridge switch includes a first enhancement mode transistor and a first depletion mode transistor. A drain pad of the first depletion mode transistor is electrically connected to the first metal island. The lower bridge switch includes a second enhancement mode transistor and a second depletion mode transistor. A source pad of the second depletion mode transistor is electrically connected to a drain pad of the second enhancement mode transistor. A drain pad of the second depletion mode transistor is electrically connected to the first metal island.

Abstract: A portable electronic apparatus including a first body, a second body, and a keyboard is provided. The second body is pivotally connected to the first body. The keyboard is disposed on the first body and includes a plurality of key structures. One of the key structures includes an elevating platform, a key cap, and a camera. The key cap is detachably mounted to the elevating platform, and the camera is mounted at one side of the key cap facing the elevating platform. After the camera is detached from the elevating platform together with the key cap, the camera is mounted and positioned to the second body together with the key cap, and at least a portion of the camera is exposed to the outside.

Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

Abstract: A portable electronic apparatus including a first body, a second body, and a keyboard is provided. The second body is pivotally connected to the first body. The keyboard is disposed on the first body and includes a plurality of key structures. One of the key structures includes an elevating platform, a key cap, and a camera. The key cap is detachably mounted to the elevating platform, and the camera is mounted at one side of the key cap facing the elevating platform. After the camera is detached from the elevating platform together with the key cap, the camera is mounted and positioned to the second body together with the key cap, and at least a portion of the camera is exposed to the outside.

Abstract: An object identification method includes: generating a tracking sample and an adversarial sample; training a teacher model according to the tracking sample; and initializing a student model according to the teacher model. The student model adjusts a plurality of parameters according to the teacher model and the adversarial sample, in response to the vector difference between the output result of the student model and the output result of the teacher model being lower than the learning threshold, the student model is deemed to have completed training, and the student model is extracted as an object identification model.

Abstract: A light-emitting diode device with a driving mechanism is provided. A first light-emitting diode chip, a second light-emitting diode chip and a third light-emitting diode chip are arranged on a driver circuit chip, and respectively configured to emit red light, green light and blue light. A first contact of the light-emitting diode chip, a first contact of the second light-emitting diode chip and a first contact of the third light-emitting diode chip are respectively in direct electrical contact with a first output contact, a second output contact and a third output contact of the driver circuit chip in a flip-chip manner. A second contact of the first light-emitting diode chip, a second contact of the second light-emitting diode chip and a second contact of the third light-emitting diode chip are in direct electrical contact with a common contact of the driver circuit chip.

Abstract: The present invention discloses a double-gate trench-type insulated-gate bipolar transistor device. A first trench and a second trench, which are located in a P-type doped well layer, and separate from each other, are extended into a lightly-doped N-type drift layer. A heavily-doped P-type source region and a heavily-doped N-type source region, which are sequentially connected, are located between the first trench and the second trench, and are arranged at an upper part of the P-type doped well layer in a horizontal direction. The heavily-doped P-type source region is located at a periphery of the second trench, a middle part and the upper part of the P-type doped well layer are provided with an N-type doped well layer and a P-type doped base region layer, respectively. The heavily-doped P-type source region and the heavily-doped N-type source region are both located at an upper part of the P-type doped base region layer.

Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

Abstract: A method of purifying silicon carbide powder includes: providing a container with a surface coated by a nitrogen-removal metal layer, wherein the nitrogen-removal metal layer is tantalum, niobium, tungsten, or a combination thereof; putting a silicon carbide powder into the container to contact the nitrogen-removal metal layer; and heating the silicon carbide powder under an inert gas at a pressure of 400 torr to 760 torr at 1700° C. to 2300° C. for 2 to 10 hours, thereby reducing the nitrogen content of the silicon carbide powder.