Patents by Inventor Kuo-Lun Tseng

Kuo-Lun Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating an image sensor
    Publication number: 20070166868
    Abstract: A method of fabricating an image sensor on a semiconductor substrate having a sensor array region is described. A first planar layer is formed on a semiconductor substrate. Then, a color filter array (CFA) is formed on the first planar layer. A second planar layer is formed on the color filter array. Thereafter, a plurality of U-lenses is formed on the second planar layer. A passivation is formed over the second planar layer and the U-lenses by performing a plasma-enhanced chemical vapor deposition (PECVD) process using TEOS gas. The passivation layer is formed under the conditions that include applying radio frequency power at a rating between 250W˜450W and supplying TEOS gas at a mass flow rate of about 150˜500 mg/m.
    Type: Application
    Filed: January 5, 2006
    Publication date: July 19, 2007
    Inventors: Teng-Yuan Ko, Kuo-Lun Tseng, Ho-Sung Liao, Wen-Liang Tseng, Kuo-Fen Sun, Meng-Tsung Chen
  • Method of forming a tungsten-plug contact for a semiconductor device
    Patent number: 6020259
    Abstract: A method for forming a tungsten plug is disclosed herein. A TiSi.sub.2 layer is selectively formed in a contact hole by using chemical vapor deposition. Then, a TiN layer is formed on the surface of the contact hole and on the TiSi.sub.2 layer. Next, a tungsten layer is formed on the TiN layer and in the contact hole. A CMP is used to remove a portion of the tungsten layer and TiN layer for planarization.
    Type: Grant
    Filed: May 1, 1997
    Date of Patent: February 1, 2000
    Assignee: Mosel Vitelic, Inc.
    Inventors: Hsi-Chieh Chen, Guan-Jiun Yi, Wen-Cheng Tu, Kuo-Lun Tseng