Abstract: A semiconductor package structure includes a semiconductor substrate, a conductive pad on the semiconductor substrate, and a passivation layer on the semiconductor substrate and the conductive pad. The passivation layer exposes a portion of the top surface of the conductive pad. The semiconductor package structure also includes a conductive adhesive layer on the conductive pad, and a dielectric layer on the passivation layer and the conductive adhesive layer. The dielectric layer exposes a portion of the conductive adhesive layer. The semiconductor package structure also includes a redistribution layer (RDL) structure on the dielectric layer and electrically connected to the conductive pad through the conductive adhesive layer. The semiconductor package structure also includes a bump structure over the RDL structure.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor wafer and a test structure. The semiconductor wafer has a substrate having a scribe line area, a first die area and a second die area. The first die area and the second die area are separated by the scribe line area extending along a first direction. The test structure is disposed in the scribe line area. The test structure includes a test device and a first test pad. The test device has a physical characteristic similar to a semiconductor device fabricated in the first die area or the second die area. The first test pad is electrically connected to the test device. A first distance between the first test pad and the first die area gradually increases from a center region to a peripheral region of the first test pad in the first direction.

Abstract: A wafer level chip scale package includes a bare silicon die having an active surface, a rear surface opposite to the active surface, and a sidewall surface between the active surface and the rear surface. The bare silicon die includes a backside corner between the rear surface and the sidewall surface. A plurality of pads is disposed on the active surface. A plurality of conductive elements is disposed on the plurality of pads, respectively. A backside tape is adhered to the rear surface by using an adhesive layer. The adhesive layer and the backside tape protrude beyond the sidewall surfaces of the bare silicon die. The adhesive layer extends along the sidewall surface and wraps around the backside corner.

Abstract: A seal ring structure is provided. The seal ring structure includes a seal ring on a semiconductor substrate. The seal ring includes a first interconnect element and a plurality of second interconnect elements. The first interconnect element is formed on a shallow trench isolation (STI) region and a first group of P-type doping regions over the semiconductor substrate. The second interconnect elements are formed below the first interconnect element and on a second group of P-type doping regions over the semiconductor substrate. The second interconnect elements are electrically separated from the first interconnect element, and the first and second groups of P-type doping regions are separated by the STI region.

Abstract: A seal ring structure is provided. The seal ring structure includes a seal ring on a semiconductor substrate. The seal ring includes a first interconnect element and a plurality of second interconnect elements. The first interconnect element is formed on a shallow trench isolation (STI) region and a first group of P-type doping regions over the semiconductor substrate. The second interconnect elements are formed below the first interconnect element and on a second group of P-type doping regions over the semiconductor substrate. The second interconnect elements are electrically separated from the first interconnect element, and the first and second groups of P-type doping regions are separated by the STI region.