Patents by Inventor Kuo-Lung Tang

Kuo-Lung Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Use of ammonia for etching organic low-k dielectrics
    Patent number: 7105454
    Abstract: Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.
    Type: Grant
    Filed: January 21, 2004
    Date of Patent: September 12, 2006
    Assignee: Lam Research Corporation
    Inventors: Chok W. Ho, Kuo-Lung Tang, Chung-Ju Lee
  • Method providing an improved bi-layer photoresist pattern
    Publication number: 20060166145
    Abstract: A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
    Type: Application
    Filed: March 24, 2006
    Publication date: July 27, 2006
    Inventors: Hanzhong Xiao, Helen Zhu, Kuo-Lung Tang, S.M. Sadjadi
  • Method providing an improved bi-layer photoresist pattern
    Patent number: 7049052
    Abstract: A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
    Type: Grant
    Filed: May 9, 2003
    Date of Patent: May 23, 2006
    Assignee: Lam Research Corporation
    Inventors: Hanzhong Xiao, Helen H. Zhu, Kuo-Lung Tang, S. M. Reza Sadjadi
  • Use of ammonia for etching organic low-k dielectrics
    Patent number: 6893969
    Abstract: Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.
    Type: Grant
    Filed: February 12, 2001
    Date of Patent: May 17, 2005
    Assignee: Lam Research Corporation
    Inventors: Chok W. Ho, Kuo-Lung Tang, Chung-Ju Lee
  • Use of ammonia for etching organic low-k dielectrics
    Publication number: 20050003676
    Abstract: Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.
    Type: Application
    Filed: January 21, 2004
    Publication date: January 6, 2005
    Inventors: Chok Ho, Kuo-Lung Tang, Chung-Ju Lee
  • Method providing an improved bi-layer photoresist pattern
    Publication number: 20040224264
    Abstract: A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
    Type: Application
    Filed: May 9, 2003
    Publication date: November 11, 2004
    Applicant: Lam Research Corporation
    Inventors: Hanzhong Xiao, Helen H. Zhu, Kuo-Lung Tang, S.M. Reza Sadjadi
  • Use of ammonia for etching organic low-k dielectrics
    Publication number: 20020108929
    Abstract: Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.
    Type: Application
    Filed: February 12, 2001
    Publication date: August 15, 2002
    Applicant: Lam Research Corporation
    Inventors: Chok W. Ho, Kuo-Lung Tang, Chung-Ju Lee