Patents by Inventor Kuo-Min Lin

Kuo-Min Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210287338
    Abstract: An image processing circuit performs super-resolution (SR) operations. The image processing circuit includes memory to store multiple parameter sets of multiple artificial intelligent (AI) models. The image processing circuit further includes an image guidance module, a parameter decision module, and an SR engine. The image guidance module operates to detect a representative feature in an image sequence including a current frame and past frames within a time window. The parameter decision module operates to adjust parameters of one or more AI models based on a measurement of the representative feature. The SR engine operates to process the current frame using the one or more AI models with the adjusted parameters to thereby generate a high-resolution image for display.
    Type: Application
    Filed: December 10, 2020
    Publication date: September 16, 2021
    Inventors: Ming-En Shih, Ping-Yuan Tsai, Yu-Cheng Tseng, Kuo-Chen Huang, Kuo-Chiang Lo, Hsin-Min Peng, Chun Hsien Wu, Pei-Kuei Tsung, Tung-Chien Chen, Yao-Sheng Wang, Cheng Lung Jen, Chih-Wei Chen, Chih-Wen Goo, Yu-Sheng Lin, Tsu Jui Hsu
  • Publication number: 20210280123
    Abstract: An image display system increases the data volume of a control signal in a frame of analog image so as to process an analog image in real time. A method for increasing the data volume of the control signal, which is used in the image display system, includes increasing the time for transmitting the control signal, changing an encoding method of the control signal to increase a data volume which is transmitted in unit time or outputting an analog image signal and the control signal at the same time. Therefore, the data volume of the control signal in a frame of image can be increased.
    Type: Application
    Filed: May 25, 2021
    Publication date: September 9, 2021
    Inventors: Kuo-Ching HUNG, Meng-Chun LIN, Han-Min CHO, Sheng-Fuu LIN
  • Publication number: 20210272877
    Abstract: A semiconductor device includes a substrate, at least one heterojunction bipolar transistor including a semiconductor unit and an electrode unit, an insulation unit, and a heat dissipation unit. The insulation unit covers the substrate and the heterojunction bipolar transistor such that a collector electrode, a base electrode and an emitter electrode of the electrode unit are electrically isolated from one another. The insulation unit is formed with an opening to expose an electrode wire of the emitter electrode. The heat dissipation unit covers the electrode wire and is made of an electrically conductive and heat dissipating material, and has a thickness that is not less than 3 ?m.
    Type: Application
    Filed: September 18, 2020
    Publication date: September 2, 2021
    Inventors: You-Min CHI, Kuo-Chun HUANG, Kun-Mu HSIEH, Yu-Chen CHIU, Chi-Chun LIN, Wen-Pin LU, Chao-Hung CHEN
  • Patent number: 11101135
    Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jian-Jou Lian, Li-Min Chen, Neng-Jye Yang, Ming-Hsi Yeh, Shun Wu Lin, Kuo-Bin Huang
  • Patent number: 9278423
    Abstract: A method for breaking up Chemical Mechanical Polishing (CMP) slurry particles includes receiving a CMP slurry comprising particles suspended in a solution, placing the slurry into a first agitation tank, and agitating the slurry at a first frequency. The first frequency is selected to break up particles having a size within a specified range.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: March 8, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: William Weilun Hong, Kuo-Min Lin, Ying-Tsung Chen
  • Patent number: 9209040
    Abstract: A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes a first cushion layer, a second cushion layer and an insulating filler. The first cushion layer is peripherally enclosed by the semiconductor substrate, the second cushion layer is peripherally enclosed by the first cushion layer, and insulating filler is peripherally enclosed by the second cushion layer. A method for fabricating the semiconductor device is also provided herein.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: December 8, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Min Lin, Wei-Lun Hong, Ying-Tsung Chen, Liang-Guang Chen
  • Publication number: 20150279686
    Abstract: One or more methods for semiconductor processing are provided. At least one of the methods include receiving information regarding a pre-etch back thickness of a first layer over a substrate, comparing the pre-etch back thickness to a desired thickness of the first layer, responsive to the pre-etch back thickness being greater than the desired thickness, determining parameters for an etch back process and performing the etch back process on the first layer to reduce the pre-etch back thickness to a first etch back thickness. The etch back process comprising performing a gas cluster ion beam etching process. In some embodiments, a second etch back process is performed. In some embodiments a wet clean process is performed on the first layer after the etch back process.
    Type: Application
    Filed: March 31, 2014
    Publication date: October 1, 2015
    Inventors: Cheng-Yu Kuo, Teng-Chun Tsai, Ying-Ho Chen, Kuo-Min Lin, Ying-Tsung Chen, Bing-Hung Chen
  • Publication number: 20150102456
    Abstract: A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes a first cushion layer, a second cushion layer and an insulating filler. The first cushion layer is peripherally enclosed by the semiconductor substrate, the second cushion layer is peripherally enclosed by the first cushion layer, and insulating filler is peripherally enclosed by the second cushion layer. A method for fabricating the semiconductor device is also provided herein.
    Type: Application
    Filed: October 11, 2013
    Publication date: April 16, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Min LIN, Wei-Lun HONG, Ying-Tsung CHEN, Liang-Guang CHEN
  • Publication number: 20150099431
    Abstract: A method for breaking up Chemical Mechanical Polishing (CMP) slurry particles includes receiving a CMP slurry comprising particles suspended in a solution, placing the slurry into a first agitation tank, and agitating the slurry at a first frequency. The first frequency is selected to break up particles having a size within a specified range.
    Type: Application
    Filed: October 8, 2013
    Publication date: April 9, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: William Weilun Hong, Kuo-Min Lin, Ying-Tsung Chen
  • Patent number: 7452484
    Abstract: An inorganic phosphor and a method for manufacturing the same are proposed. The sol-gel method is used and the elements vanadium and sulfate are added to synthesize a red-emission gadolinium titanium oxide phosphor doped with Eu3+, V and S to change the original red/orange-emission property and enhance the red-emission intensity. Moreover, the elements vanadium and sulfate replace the rare-earth Eu3+ element as active sites to obtain a white-emission gadolinium titanium oxide phosphor doped with V and S. Using this single-kind phosphor, white light can be emitted under the excitation of violet light without the need of mixing multiple colors.
    Type: Grant
    Filed: June 21, 2006
    Date of Patent: November 18, 2008
    Assignee: National Chung Cheng University
    Inventors: Yuan-Yao Li, Kuo-Min Lin
  • Publication number: 20070108412
    Abstract: An inorganic phosphor and a method for manufacturing the same are proposed. The sol-gel method is used and the elements vanadium and sulfate are added to synthesize a red-emission gadolinium titanium oxide phosphor doped with Eu3+, V and S to change the original red/orange-emission property and enhance the red-emission intensity. Moreover, the elements vanadium and sulfate replace the rare-earth Eu3+ element as active sites to obtain a white-emission gadolinium titanium oxide phosphor doped with V and S. Using this single-kind phosphor, white light can be emitted under the excitation of violet light without the need of mixing multiple colors.
    Type: Application
    Filed: June 21, 2006
    Publication date: May 17, 2007
    Inventors: Yuan-Yao Li, Kuo-Min Lin