Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: An axial flux motor includes a rotor assembly and a stator assembly. The rotor assembly has magnets. The stator assembly has a circuit substrate, segmented iron cores, and a coil. The circuit substrate extends radially. The segmented iron cores are supported on the circuit substrate to be opposite to the magnet in the axial direction. Segmented iron cores arranged in the circumferential direction. A coil is sleeved on a segmented iron core. Holding seats of an insulating material correspond respectively to the segmented iron cores. A holding seat abuts with and covers a segmented iron core from both axial sides and the circumferential direction, and is used for winding the coil. The circuit substrate has slot holes. A slot hole is used for embedding and positioning a portion of a holding seat that protrudes more towards one axial side than the coil.

Abstract: A method of forming a FinFET is disclosed. The method includes depositing a conductive material across each of a number of adjacent fins, depositing a sacrificial mask over the conductive material, patterning the conductive material with the sacrificial mask to form a plurality of conductive material segments, depositing a sacrificial layer over the sacrificial mask, and patterning the sacrificial layer, where a portion of the patterned sacrificial layer remains over the sacrificial mask, where a portion of the sacrificial mask is exposed, and where the exposed portion of the sacrificial mask extends across each of the adjacent fins. The method also includes removing the portion of the sacrificial layer over the sacrificial mask, after removing the portion of the sacrificial layer over the sacrificial mask, removing the sacrificial mask, epitaxially growing a plurality of source/drain regions from the semiconductor substrate, and electrically connecting the source/drain regions to other devices.

Abstract: A method for breaking up Chemical Mechanical Polishing (CMP) slurry particles includes receiving a CMP slurry comprising particles suspended in a solution, placing the slurry into a first agitation tank, and agitating the slurry at a first frequency. The first frequency is selected to break up particles having a size within a specified range.

Abstract: A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes a first cushion layer, a second cushion layer and an insulating filler. The first cushion layer is peripherally enclosed by the semiconductor substrate, the second cushion layer is peripherally enclosed by the first cushion layer, and insulating filler is peripherally enclosed by the second cushion layer. A method for fabricating the semiconductor device is also provided herein.

Abstract: One or more methods for semiconductor processing are provided. At least one of the methods include receiving information regarding a pre-etch back thickness of a first layer over a substrate, comparing the pre-etch back thickness to a desired thickness of the first layer, responsive to the pre-etch back thickness being greater than the desired thickness, determining parameters for an etch back process and performing the etch back process on the first layer to reduce the pre-etch back thickness to a first etch back thickness. The etch back process comprising performing a gas cluster ion beam etching process. In some embodiments, a second etch back process is performed. In some embodiments a wet clean process is performed on the first layer after the etch back process.

Abstract: A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes a first cushion layer, a second cushion layer and an insulating filler. The first cushion layer is peripherally enclosed by the semiconductor substrate, the second cushion layer is peripherally enclosed by the first cushion layer, and insulating filler is peripherally enclosed by the second cushion layer. A method for fabricating the semiconductor device is also provided herein.

Abstract: A method for breaking up Chemical Mechanical Polishing (CMP) slurry particles includes receiving a CMP slurry comprising particles suspended in a solution, placing the slurry into a first agitation tank, and agitating the slurry at a first frequency. The first frequency is selected to break up particles having a size within a specified range.

Abstract: An inorganic phosphor and a method for manufacturing the same are proposed. The sol-gel method is used and the elements vanadium and sulfate are added to synthesize a red-emission gadolinium titanium oxide phosphor doped with Eu3+, V and S to change the original red/orange-emission property and enhance the red-emission intensity. Moreover, the elements vanadium and sulfate replace the rare-earth Eu3+ element as active sites to obtain a white-emission gadolinium titanium oxide phosphor doped with V and S. Using this single-kind phosphor, white light can be emitted under the excitation of violet light without the need of mixing multiple colors.

Abstract: An inorganic phosphor and a method for manufacturing the same are proposed. The sol-gel method is used and the elements vanadium and sulfate are added to synthesize a red-emission gadolinium titanium oxide phosphor doped with Eu3+, V and S to change the original red/orange-emission property and enhance the red-emission intensity. Moreover, the elements vanadium and sulfate replace the rare-earth Eu3+ element as active sites to obtain a white-emission gadolinium titanium oxide phosphor doped with V and S. Using this single-kind phosphor, white light can be emitted under the excitation of violet light without the need of mixing multiple colors.