Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a sensing device, a solar cell, and an interconnecting structure. The solar cell is disposed above the sensing device and is electrically connected to the sensing device. The interconnecting structure is disposed between the sensing device and the solar cell and has a first surface facing the solar cell and a second surface facing the sensing devices. The interconnecting structure comprises a first energy storage component and a second energy storage component. The first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.

Abstract: The present disclosure describes a method for memory cell placement. The method can include placing a memory cell region in a layout area and placing a well pick-up region and a first power supply routing region along a first side of the memory cell region. The method also includes placing a second power supply routing region and a bitline jumper routing region along a second side of the memory cell region, where the second side is on an opposite side to that of the first side. The method further includes placing a device region along the second side of the memory cell region, where the bitline jumper routing region is between the second power supply routing region and the device region.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: Systems and methods are provided for forming an intra-connection structure. A first gate structure and a first source/drain region adjacent to the first gate structure is formed on a substrate. A first dielectric material is disposed on the first source/drain region. A spacer material is formed on the first gate structure. The first dielectric material is removed to expose at least part of the first source/drain region. At least part of the spacer material is removed to expose at least part of the first gate structure. A first conductive material is formed between the first gate structure and the first source/drain region to electrically connect the first source/drain region and the first gate structure.

Abstract: A method of forming a semiconductor device includes providing a substrate including a circuit region and a well strap region, forming a mandrel extending from the circuit region to the well strap region, depositing mandrel spacers on sidewalls of the mandrel, removing the mandrel in the circuit region, while the mandrel in the well strap region remains intact, patterning the substrate with the mandrel spacers in the circuit region and the mandrel in the well strap region as an etch mask, thereby forming at least a first fin in the circuit region and a second fin in the well strap region, and epitaxially growing a first epitaxial feature over the first fin in the circuit region and a second epitaxial feature over the second fin in the well strap region. A width of the second fin is larger than a width of the first fin.

Abstract: The present invention provides a flush apparatus and a flush control method thereof. The flush control method includes the steps of detecting a target, counting an interval time from a previous flush to the detection of the target, and comparing the interval time with at least one pre-set interval time to determine an operating mode of the flush apparatus.

Abstract: A motor soft start controller, which is composed of a rectifying and voltage-stabilizing circuit, a microprocessor, a motor switch electrically connected with a motor, a reset button, a signal amplifying circuit electrically connected with a touch piece, a motor driving circuit, and a current detecting circuit. The current detecting circuit monitors the current flowing through the motor to control. The microprocessor controls the motor driving circuit to further control the current. Further, the motor can be activated correctly by the dual arrangement of the reset button and the motor switch to avoid erroneous activation thereof.

Abstract: A motor soft start controller, which is composed of a rectifying and voltage-stabilizing circuit, a microprocessor, a motor switch electrically connected with a motor, a reset button, a signal amplifying circuit electrically connected with a touch piece, a motor driving circuit, and a current detecting circuit. The current detecting circuit monitors the current flowing through the motor to control. The microprocessor controls the motor driving circuit to further control the current. Further, the motor can be activated correctly by the dual arrangement of the reset button and the motor switch to avoid erroneous activation thereof.

Abstract: A manufacturing method of an integrated mass flow controller (MFC) module is disclosed. The integrated MFC module is comprising top, middle and bottom parts. The middle part of the integrated MFC module which is consist of both the microvalve and sensing regions that is the key feature of the present invention. The microvalve is formed by depositing a heating element in a microbridge suspended on a mesa to control the movement of the valve. On the other hand, a series of sensing elements of the sensing region are in the mass flow path to detect the mass flow. The top and bottom parts are used for mass flow channel, mass entrance, mass exit and signal output terminals. There are bumps in the interface between middle and bottom parts to support the microvalve mesa. All three parts are first fabricated on a semiconductor wafer separately and then engaged together to complete the integrated MFC module formation.

Abstract: A life saving device that can be attached to the body of a user including an attachment strap, a housing, an inflation sac, a rope, a pressure release device and a compressed air cylinder. The attachment strap is attached to the user's body. The housing accommodates the inflation sac, the rope, the pressure release device and the compressed air cylinder. An upper cover of the housing is popped off when the inflation sac is being inflated. The inflation sac envelops the compressed air cylinder and most of the pressure release device with a press element of the latter partly projecting from an opening of the inflation sac. When the press element is pressed, a steel ball stopping the compressed air cylinder is pushed away so that compressed air escapes from the cylinder through a tubular body and an air outlet of the pressure release device into the interior of the inflation sac to form a life ring. The rope is provided to allow the user to pull back the inflation sac if it floats away from him/her.