Abstract: Some implementations described herein include systems and techniques for fabricating a stacked die product. The systems and techniques include using a supporting fill mixture that includes a combination of types of composite particulates in a lateral gap region of a stack of semiconductor substrates and along a perimeter region of the stack of semiconductor substrates. One type of composite particulate included in the combination may be a relatively smaller size and include a smooth surface, allowing the composite particulate to ingress deep into the lateral gap region. Properties of the supporting fill mixture including the combination of types of composite particulates may control thermally induced stresses during downstream manufacturing to reduce a likelihood of defects in the supporting fill mixture and/or the stack of semiconductor substrates.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.

Abstract: A dual rotor axial-flow rotor valve structure includes a rotor valve seat for rotatably receiving rotatable first and second rotor valves. The rotor valve seat has a first and a second extension sections connected to end sections of a second and a first tuning slide assembly s. The first rotor valve communicates with end sections of first and second flow passages with a mouthpiece and the other end of the second tuning slide assembly and communicate the other end of the second flow passage with the first or second extension section. The second rotor valve communicates ends of the first and second flow passages with the other end of the first tuning slide assembly and a main tuning slide assembly and communicate the other end of the second flow passage with the first or second extension section.

Abstract: A dual rotor axial-flow rotor valve structure includes a rotor valve seat for rotatably receiving rotatable first and second rotor valves. The rotor valve seat has a first and a second extension sections connected to end sections of a second and a first tuning slide assembly s. The first rotor valve communicates with end sections of first and second flow passages with a mouthpiece and the other end of the second tuning slide assembly and communicate the other end of the second flow passage with the first or second extension section. The second rotor valve communicates ends of the first and second flow passages with the other end of the first tuning slide assembly and a main tuning slide assembly and communicate the other end of the second flow passage with the first or second extension section.

Abstract: A straight-through rotary valve structure includes: a case having an internal conic receiving space with an opening, a first extension section being disposed at a tip of the receiving space, a second extension section being disposed beside the first extension section; a conic rotary valve block having a pivot shaft and formed with a first hole and a second hole, the first hole communicating with a third hole formed at a tip of the rotary valve block in communication with the first extension section, the second hole communicating with a fourth hole formed on a conic face of the rotary valve block; and an outer cover blocking the opening of the case. The outer cover is formed with a central shaft hole through which the pivot shaft passes. The outer cover is further formed with a first perforation and a second perforation corresponding to the first and second holes respectively.

Abstract: A straight-through rotary valve structure includes: a case having an internal conic receiving space with an opening, a first extension section being disposed at a tip of the receiving space, a second extension section being disposed beside the first extension section; a conic rotary valve block having a pivot shaft and formed with a first hole and a second hole, the first hole communicating with a third hole formed at a tip of the rotary valve block in communication with the first extension section, the second hole communicating with a fourth hole formed on a conic face of the rotary valve block; and an outer cover blocking the opening of the case. The outer cover is formed with a central shaft hole through which the pivot shaft passes. The outer cover is further formed with a first perforation and a second perforation corresponding to the first and second holes respectively.