Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.

Abstract: A semiconductor structures and a method for forming the same are provided. The semiconductor structure includes first nanostructures and second nanostructures spaced apart from the first nanostructures in a first direction. A left-most point of the first nanostructures and a left-most point of the second nanostructures has a first distance in the first direction. The semiconductor structure further includes first source/drain features attached to opposite sides of the first nanostructures in a second direction being orthogonal to the first direction and third nanostructures and fourth nanostructures spaced apart from the third nanostructures in the first direction. A left-most point of the third nanostructures and a left-most point of the fourth nanostructures has a second distance in the first direction. In addition, the third nanostructures are wider than the first nanostructures in the first direction, and the first distance is smaller than the second distance.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor fin over a substrate and multiple semiconductor nanostructures suspended over the semiconductor fin. The semiconductor device structure also includes a gate stack extending across the semiconductor fin, and the gate stack wraps around each of the semiconductor nanostructures. The semiconductor device structure further includes a first epitaxial structure and a second epitaxial structure sandwiching the semiconductor nanostructures. In addition, the semiconductor device structure includes an isolation structure between the semiconductor fin and the gate stack. The isolation structure extends exceeding opposite sidewalls of the first epitaxial structure.

Abstract: A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. The method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a conductive feature; a semiconductor stack formed over the dielectric layer, wherein the semiconductor stack including semiconductor layers stacked up and separated from each other; a first metal gate structure and a second metal gate structure formed over a channel region of the semiconductor stack, wherein the first metal gate structure and the second metal gate structure wrap each of the semiconductor layers of the semiconductor stack; and a first epitaxial feature disposed between the first metal gate structure and the second metal gate structure over a first source/drain region of the semiconductor stack, wherein the first epitaxial feature extends through the dielectric layer and contacts the conductive feature.

Abstract: The present invention relates to a three-dimensional multichip stack electronic package structure and method for making the same, including a main substrate having at least a pin-hole set and at least a flexible substrate having at least a pin terminal. At least an electronic device including an active component and a passive component is attached to the flexible substrate by adhesion. In the flexible substrate, electric signals of the electronic device are delivered to the pin terminal through at least a conductive wire for transmitting electric signals. In assembly, the pin terminal of the flexible substrate is inserted into the pin hole of the main substrate. Then, the flexible substrate is folded so as to package the electronic device in a three-dimensional multichip stack manner.

Abstract: The present invention relates to a three-dimensional multichip stack electronic package structure and method for making the same, including a main substrate having at least a pin-hole set and at least a flexible substrate having at least a pin terminal. At least an electronic device including an active component and a passive component is attached to the flexible substrate by adhesion. In the flexible substrate, electric signals of the electronic device are delivered to the pin terminal through at least a conductive wire for transmitting electric signals. In assembly, the pin terminal of the flexible substrate is inserted into the pin hole of the main substrate. Then, the flexible substrate is folded so as to package the electronic device in a three-dimensional multichip stack manner.

Abstract: A semiconductor assembly has solder bumps with increased reliability. One embodiment of an assembly comprises a first substrate having at least one conductive pad on its surface; a second substrate having at least one conductive pad on its surface; at least one conductive stud; and at least one solder bump in contact with the conductive pad on the first substrate, and in contact with the conductive pad of the second substrate, and formed around the at least one conductive stud. Methods for providing these assemblies are included.

Abstract: The present invention relates to a three-dimensional multichip stack electronic package structure and method for making the same, including a main substrate having at least a pin-hole set and at least a flexible substrate having at least a pin terminal. At least an electronic device including an active component and a passive component is attached to the flexible substrate by adhesion. In the flexible substrate, electric signals of the electronic device are delivered to the pin terminal through at least a conductive wire for transmitting electric signals. In assembly, the pin terminal of the flexible substrate is inserted into the pin hole of the main substrate. Then, the flexible substrate is folded so as to package the electronic device in a three-dimensional multichip stack manner.

Abstract: An integrated circuit chip with ball-grid array solder balls is packaged as a module without being sealed in protective glue. The IC chip is mounted on an insulating substrate with pads to support the solder balls. The pads are connected to a second set of pads along the periphery of the substrate. Leads are pressed against the second set of pads for external connections. A second IC chip may be pressed against the other side of the substrate to increase the external connections.

Abstract: An integrated circuit chip with ball-grid array solder balls is packaged as a module without being sealed in protective glue. The IC chip is mounted on an insulating substrate with pads to support the solder balls. The pads are conducted to a second set of pads along the periphery of the substrate. Leads are pressed against the second set of pads for external connections. A second IC chip may be pressed against the other side of the substrate to increase the external connections.

Abstract: The invention is a silicon pressure micro-sensing device and the fabrication process thereof. The silicon pressure micro-sensing device includes a pressure chamber, and is constituted of a P-type substrate with a taper chamber and an N-type epitaxial layer thereon. On the N-type epitaxial layer are a plurality of piezo-resistance sensing units which sense deformation caused by pressure. The fabrication pressure of the silicon pressure micro-sensing device includes a step of first making a plurality of holes on the N-type epitaxial layer to reach the P-type substrate beneath. Then, by an anisotropic etching stop technique, in which etchant pass through the holes, a taper chamber is formed in the P-type substrate. Finally, an insulating material is applied to seal the holes, thus attaining the silicon pressure micro-sensing device that is able to sense pressure differences between two ends thereof.

Abstract: The invention is a silicon pressure micro-sensing device and the fabrication process thereof. The silicon pressure micro-sensing device includes a pressure chamber, and is constituted of a P-type substrate with a taper chamber and an N-type epitaxial layer thereon. On the N-type epitaxial layer are a plurality of piezo-resistance sensing units which sense deformation caused by pressure. The fabrication pressure of the silicon pressure micro-sensing device includes a step of first making a plurality of holes on the N-type epitaxial layer to reach the P-type substrate beneath. Then, by an anisotropic etching stop technique, in which etchant pass through the holes, a taper chamber is formed in the P-type substrate. Finally, an insulating material is applied to seal the holes, thus attaining the silicon pressure micro-sensing device that is able to sense pressure differences between two ends thereof.

Abstract: A semiconductor chip is mounted over a flexible base plate. The base plate has an array of bubbles. Each bubble is coated with a metal tip, which is coupled by printed and leads bonds to the bonding pads of the chip. The metal tips are for making contacts to a printed circuit board when the package is mounted to a printed circuit board.

Abstract: The IC chips of a multiple IC chip module are mounted in stack in a ceramic substrate, which has good heat dissipating capability. At least one IC chip is mounted on top of the ceramic substrate and at least one other IC chip is mounted at the bottom of the ceramic substrate. The bonding pads along the periphery of the ceramic substrate are lead-bonded to a second substrate with printed wiring on at least one of the surfaces and solder connection at the bottom. The IC chip is separated from the second substrate by a resin to cushion the stress due to difference in thermal expansion coefficients of the IC chip and the second substrate.

Abstract: A package for multiple IC chip module. The IC chip is attached to electric wires on ceramic substrate which has good heat dissipating capability. The bonding pads along the periphery of the ceramic substrate are lead-bonded to a second substrate with printed wiring on at least one side of the surfaces and ball grid array at the bottom surface. Double-sided printed wiring can be used to provide multiple-layered interconnection. The IC chip is separated from the second substrate by a resin to cushion the stress due to difference in thermal expansion coefficients of the IC chip and the second substrate.

Abstract: A micro ball grid array package is devised for a multiple-chip module (MCM). The IC chips in the package are butted together to save space. The bonding pads for the lower IC chip or chips are placed along the edges not butted with one another. The bonding pads of the chips are wire-bonded to a printed wiring plate, which has via holes through the printed wiring plate for connection to the ball grid array at the other side of the printed wiring plate and for surface mounting to a printed circuit board. A heat dissipating plate may be placed at the top of the IC chips away from the ball grid array.

Abstract: A micro ball grid array package is devised for a multiple-chip module (MCM). The IC chips in the package are stacked to save space. The bonding pads for the lower IC chip or chips are placed along the edges where the pads are not masked by the stacking of the upper chip or chips. When there are more than one chip at each level of the stacking, the IC chips at each level are butted with each other to further save space. The bonding pads of the chips are wire-bonded to a printed wiring plate, which has via holes through the printed wiring plate for connection to the ball grid array at the other side of the printed wiring plate and for surface mounting to a printed circuit board. A heat dissipating plate may be inserted at the bottom of the IC chips away from the stacking surface.