Abstract: A thermoresponsive facial mask has a non-woven fabric structure with multiple layers, wherein at last one of the layers of the non-woven fabric structure has far-infrared hollow fibers. The far-infrared hollow fibers content far-infrared powers that emit a far-infrared radiation. A formula for the thermoresponsive facial mask has a polyalcohol and a germanium element, which promotes the thermoresponsive facial mask to generate an advantage of forming the warming effect automatically.

Abstract: An insulated metal substrate (IMS) includes a metal substrate, an insulating layer, a plastic frame, and a plurality of conductive metal pads. The insulating layer is located on the metal substrate. The plastic frame is located on the insulating layer and has a plurality of aperture areas. The conductive metal pads are located on the insulating layer and are respectively located in the aperture areas, and the conductive metal pads have sidewalls are in contact with the plastic frame.

Abstract: An insulated metal substrate (IMS) includes a metal substrate, an insulating layer, a plastic frame, and a plurality of conductive metal pads. The insulating layer is located on the metal substrate. The plastic frame is located on the insulating layer and has a plurality of aperture areas. The conductive metal pads are located on the insulating layer and are respectively located in the aperture areas, and the conductive metal pads have sidewalls are in contact with the plastic frame.

Abstract: An insulated metal substrate (IMS) includes a metal substrate, an insulating layer, a plastic frame, and a plurality of conductive metal pads. The insulating layer is located on the metal substrate. The plastic frame is located on the insulating layer and has a plurality of aperture areas. The conductive metal pads are located on the insulating layer and are respectively located in the aperture areas, and the conductive metal pads have sidewalls are in contact with the plastic frame.

Abstract: An insulated metal substrate (IMS) includes a metal substrate, an insulating layer, a plastic frame, and a plurality of conductive metal pads. The insulating layer is located on the metal substrate. The plastic frame is located on the insulating layer and has a plurality of aperture areas. The conductive metal pads are located on the insulating layer and are respectively located in the aperture areas, and the conductive metal pads have sidewalls are in contact with the plastic frame.

Abstract: An insulated metal substrate (IMS) includes a metal substrate, an insulating layer, a plastic frame, and a plurality of conductive metal pads. The insulating layer is located on the metal substrate. The plastic frame is located on the insulating layer and has a plurality of aperture areas. The conductive metal pads are located on the insulating layer and are respectively located in the aperture areas, and the conductive metal pads have sidewalls are in contact with the plastic frame.

Abstract: An equipment of manufacturing a bundle of electrospun yarn has a vortex containing device and a bundles collecting device. The vortex containing device has a feeding end, an exporting end and a vortex generator. The vortex generator is mounted in and communicates with the vortex containing device to form a fluid vortex in the vortex containing device to provide a guiding force. The guiding force draws an electrospun fiber into the feeding end of the vortex containing device. The electrospun fiber is wound to form a bundle of electrospun yarn by the fluid vortex. The bundles collecting device is rotated to collect the bundle of electrospun yarn.

Abstract: Provided is a composite powder used for the visible light catalytic and anti-bacterial purposes. The composite powder includes a plurality of N-type semiconductor particles and a plurality of P-type semiconductor nano-particles. The P-type semiconductor nano-particles cover surfaces of the N-type semiconductor particles respectively. A weight ratio of the N-type semiconductor particles and the P-type semiconductor nano-particles is in a range of 1:0.1 to 1:0.5. A PN junction is provided between each of the N-type semiconductor particles and the corresponding P-type semiconductor nano-particles.

Abstract: An equipment of manufacturing a bundle of electrospun yarn has a vortex containing device and a bundles collecting device. The vortex containing device has a feeding end, an exporting end and a vortex generator. The vortex generator is mounted in and communicates with the vortex containing device to form a fluid vortex in the vortex containing device to provide a guiding force. The guiding force draws an electrospun fiber into the feeding end of the vortex containing device. The electrospun fiber is wound to form a bundle of electrospun yarn by the fluid vortex. The bundles collecting device is rotated to collect the bundle of electrospun yarn.