Abstract: Provided is a method for preventing or treating a liver disease, including administering a therapeutically effective amount of pharmaceutical composition to a subject in need, and the pharmaceutical composition includes the isothiocyanate structural modified compound and a pharmaceutically acceptable carrier thereof.

Abstract: A semiconductor device includes a semiconductor substrate having a first lattice constant, a dopant blocking layer disposed over the semiconductor substrate, the dopant blocking layer having a second lattice constant different from the first lattice constant, and a buffer layer disposed over the dopant blocking layer, the buffer layer having a third lattice constant different from the second lattice constant. The semiconductor device also includes a plurality of channel members suspended over the buffer layer, an epitaxial feature abutting the channel members, and a gate structure wrapping each of the channel members.

Abstract: A quantitative sensor and manufacture method thereof are disclosed. This quantitative sensor has a dual-mode film bulk acoustic resonator structure to achieve desirable performances in sensitivity, accuracy and efficiency. Furthermore, this quantitative sensor serves as a fluid sensor when a fluid detection metal layer is formed in a sample-receiving chamber; and this quantitative sensor may also serve as a bio sensor when biocompatible metal layer and a bio-sensing layer are formed in the sample-receiving chamber instead of the fluid detection metal layer.

Abstract: A quantitative sensor and manufacture method thereof are disclosed. This quantitative sensor has a dual-mode film bulk acoustic resonator structure to achieve desirable performances in sensitivity, accuracy and efficiency. Furthermore, this quantitative sensor serves as a fluid sensor when a fluid detection metal layer is formed in a sample-receiving chamber; and this quantitative sensor may also serve as a bio sensor when biocompatible metal layer and a bio-sensing layer are formed in the sample-receiving chamber instead of the fluid detection metal layer.

Abstract: An acoustic resonator device includes a semiconductor substrate, a FBAR (thin film bulk acoustic resonator) and a support plate. The FBAR is fabricated on the upper surface of the semiconductor substrate. The semiconductor substrate has a resonant cavity through the upper and the lower surfaces thereof. The support plate is attached to the lower surface of the semiconductor substrate to shelter the opening of the resonant cavity. Moreover, the support plate can provide a larger die-attaching area for the acoustic resonator device, for the protection of the resonant cavity from chipping during wafer sawing.