Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

Abstract: Disclosed herein is a method comprising: generating a plurality of probe spots on a sample by a plurality of beams of charged particles; while scanning the plurality of probe spots across a region on the sample, recording from the plurality of probe spots a plurality of sets of signals respectively representing interactions of the plurality of beams of charged particles and the sample; generating a plurality of images of the region respectively from the plurality of sets of signals; and generating a composite image of the region from the plurality of images.

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

Abstract: Disclosed herein is a method comprising: generating a plurality of probe spots on a sample by a plurality of beams of charged particles; while scanning the plurality of probe spots across a region on the sample, recording from the plurality of probe spots a plurality of sets of signals respectively representing interactions of the plurality of beams of charged particles and the sample; generating a plurality of images of the region respectively from the plurality of sets of signals; and generating a composite image of the region from the plurality of images.

Abstract: Interference lithography (IL) system and methods are disclosed according to embodiments of the invention. Two beams of coherent light with a first phase difference expose a first interference pattern on a nonlinear photoresist. A second interference pattern may be exposed on the nonlinear photoresist using the same coherent light beams with a second phase difference. The difference between the first and second phase differences is between 70° and 270°. The ensuing pattern is a composite of the first and second interference patterns. The IL may employ a third and fourth light beam.

Abstract: A solar panel and an electrode structure thereof and a manufacturing method thereof are provided. The electrode structure comprises a first conductive structure and a second conductive structure. The first conductive structure is electrically connected to a plurality of first pole contacts of a first solar cell. The second conductive structure is connected to the first conductive structure, and the first and the second conductive structures are substantially extended along a line. The second conductive structure is electrically connected to a plurality of second pole contacts of a second solar cell.

Abstract: A solar cell panel is provided. The solar cell panel includes a solar cell module and a transparent substrate. The solar cell module includes a number of solar cells having a number of gaps. Each gap is located between any adjacent two of the solar cells. A transparent substrate is disposed above the solar cell module. The transparent substrate has a patterned structure which is right above the gaps.

Abstract: A lithography scanner and track system is provided that includes an interference lithography system according to one embodiment. The scanner provides a first optical exposure of a wafer. The track system provides pre and post-processing functions on a wafer. The interference lithography system may be included within the scanner and may expose a wafer either before or after the first optical exposure. The interference lithography system may also be included within the track system as part of the pre or post processing. The first optical exposure may include optical photolithography.

Abstract: A method for providing regular line patterns using interference lithography and sidewall patterning techniques is provided according to one embodiment. The method comprising may include producing regularly spaced parallel lines on a template using interference lithography techniques and then depositing sidewalls on the longitudinal sides of the regularly spaced parallel lines using sidewall patterning techniques. Various deposition and etching steps may also be included. The embodiments of the invention may provide regular line patterns with a line density half the interference lithography line density. Various lithography techniques may also be used to crop rounded connecting resulting from the sidewall patterning and/or to alter portions of the line pattern.

Abstract: Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.

Abstract: Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.

Abstract: Interference lithography (IL) system and methods are disclosed according to embodiments of the invention. Two beams of coherent light with a first phase difference expose a first interference pattern on a nonlinear photoresist. A second interference pattern may be exposed on the nonlinear photoresist using the same coherent light beams with a second phase difference. The difference between the first and second phase differences is between 70° and 270°. The ensuing pattern is a composite of the first and second interference patterns. The IL may employ a third and fourth light beam.

Abstract: An appparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus is disposed on or otherwise connected to a gas distribution assembly of the processing chamber to prevent plasma edge effects on the surface of a substrate. The apparatus provides a plasma choke aperture that reduces the volume of the process zone around the periphery of the substrate thereby eliminating uneven deposition of material around the edge of the substrate.

Abstract: An apparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus is disposed on or otherwise connected to a gas distribution assembly of the processing chamber to prevent plasma edge effects on the surface of a substrate. The apparatus provides a plasma choke aperture that reduces the volume of the process zone around the periphery of the substrate thereby eliminating uneven deposition of material around the edge of the substrate.

Abstract: A gas feedthrough in a semiconductor processing apparatus comprises a static-dissipative composite material. This material is characterized by good resistance to electromigration and is preferably made of a homogeneous material. This apparatus for preventing the transfer of energy to a gas flown through a gas line and comprises a gas feedthrough comprising a static-dissipative material, the feedthrough having a first end for abuttingly contacting an electrically energized member and a second end for contacting a grounded member, the feedthrough defining a void therein along its length to house a gas line.