Abstract: Disclosed is a microphone-hidden speaker structure, including a housing, a microphone accommodating cavity that extends inwards and has a certain depth is formed on the housing, and a recess is formed on one end of the microphone accommodating cavity; the speaker main body further includes a decorative cover plate, and the decorative cover plate is made of soft material with a certain elasticity or hard material; and the decorative cover plate is embedded above the microphone accommodating cavity, and the decorative cover plate is detachably connected to the housing.

Abstract: Disclosed is a loudspeaker device, including a translucent inner casing, and a transparent or translucent outer casing fixed on an outer side of the inner casing, a light-emitting device being fixed inside the inner casing, the outer casing and the inner casing each being provided at least one through hole, an outward extension position extending outwardly being arranged on the through hole of the inner casing, at least one connecting segment connected to the light-emitting device is arranged inside the inner casing, the inner casing includes a first inner casing and a second inner casing, and the outer casing includes a first outer casing and a second outer casing, and a part of a speaker located inside the loudspeaker device is arranged on an inner side outward extension position.

Abstract: A microphone speaker with dual independent sound chambers is disclosed, including a housing, a microphone assembly arranged on the housing, a barrier that is formed in the housing and that divides the housing into two independent chambers, two speakers respectively embedded in two sides of the housing where the rear ends of the two speakers are respectively disposed in the two independent chambers, and two air holes that are defined in the side of the housing and that are respectively in communication with the two independent chambers, where the air flows generated when the speakers are sounding enter and exit the independent chambers through the respective air holes.

Abstract: A memory macro includes a first memory cell array, a first tracking circuit, a first and a second transistor. The first memory cell array includes rows of memory cells and columns of memory cells. The first tracking circuit includes a first set of memory cells configured as a first set of loading cells responsive to a first control signal, a second set of memory cells configured as a first set of pull-down cells responsive to a second control signal, and a first tracking bit line coupled to the first and second set of memory cells. The first set of pull-down cells or loading cells is configured to track a memory cell of the first memory cell array. The first and second transistor are coupled to the first tracking bit line, and configured to charge the first tracking bit line to a pre-charge voltage level responsive to a tracking enable signal.

Abstract: The present disclosure describes various exemplary memory storage devices that can be programmed to write electronic data into one or more memory cells in a write mode of operation and/or to read the electronic data from the one or more memory cells in a read mode of operation. The various exemplary memory storage devices can select various control lines to read the electronic data from the one or more memory cells onto data lines and/or to write the electronic data from these data lines into the one or more memory cells. In some situations, these data lines are charged, also referred to as pre-charged, to a first logical value, such as a logical one, before the various exemplary memory storage devices write the electronic data into the one or more memory cells. During this pre-charging of these data lines, the various exemplary memory storage devices electrically isolate these data lines from specialized circuitry within these exemplary memory storage devices.

Abstract: An annular reinforcing structure for the reinforcement of a supporting structure of a construction is provided. The annular reinforcing structure includes an outer frame body, an inner frame body and an elastic body. The inner frame body is connected to the outer frame body and positioned therein. The inner frame body and the outer frame body together define an annular space. The elastic body is accommodated in the annual space between the inner frame body and the outer frame body.

Abstract: A memory macro includes a first memory cell array, a first tracking circuit, a first and a second transistor. The first memory cell array includes rows of memory cells and columns of memory cells. The first tracking circuit includes a first set of memory cells configured as a first set of loading cells responsive to a first control signal, a second set of memory cells configured as a first set of pull-down cells responsive to a second control signal, and a first tracking bit line coupled to the first and second set of memory cells. The first set of pull-down cells or loading cells is configured to track a memory cell of the first memory cell array. The first and second transistor are coupled to the first tracking bit line, and configured to charge the first tracking bit line to a pre-charge voltage level responsive to a tracking enable signal.

Abstract: An annular reinforcing structure for the reinforcement of a supporting structure of a construction is provided. The annular reinforcing structure includes an outer frame body, an inner frame body and an elastic body. The inner frame body is connected to the outer frame body and positioned therein. The inner frame body and the outer frame body together define an annular space. The elastic body is accommodated in the annual space between the inner frame body and the outer frame body.

Abstract: A memory macro includes a first memory cell array, a first tracking circuit, a first and a second transistor. The first tracking circuit includes a first set of memory cells configured as a first set of loading cells responsive to a first control signal, a second set of memory cells configured as a first set of pull-down cells responsive to a second control signal, and a first tracking bit line extending over the first tracking circuit. The second control signal is inverted from the first control signal. At least the first set of pull-down cells or the first set of loading cells is configured to track a memory cell of the first memory cell array. The first and second transistor are coupled to the first tracking bit line, and are configured to charge the first tracking bit line to a pre-charge voltage level responsive to a third control signal.

Abstract: The present disclosure describes various exemplary memory storage devices that can be programmed to write electronic data into one or more memory cells in a write mode of operation and/or to read the electronic data from the one or more memory cells in a read mode of operation. The various exemplary memory storage devices can select various control lines to read the electronic data from the one or more memory cells onto data lines and/or to write the electronic data from these data lines into the one or more memory cells. In some situations, these data lines are charged, also referred to as pre-charged, to a first logical value, such as a logical one, before the various exemplary memory storage devices write the electronic data into the one or more memory cells. During this pre-charging of these data lines, the various exemplary memory storage devices electrically isolate these data lines from specialized circuitry within these exemplary memory storage devices.

Abstract: The present disclosure describes various exemplary memory storage devices that can be programmed to write electronic data into one or more memory cells in a write mode of operation and/or to read the electronic data from the one or more memory cells in a read mode of operation. The various exemplary memory storage devices can select various control lines to read the electronic data from the one or more memory cells onto data lines and/or to write the electronic data from these data lines into the one or more memory cells. In some situations, these data lines are charged, also referred to as pre-charged, to a first logical value, such as a logical one, before the various exemplary memory storage devices write the electronic data into the one or more memory cells. During this pre-charging of these data lines, the various exemplary memory storage devices electrically isolate these data lines from specialized circuitry within these exemplary memory storage devices.

Abstract: A memory macro includes a first memory cell array, a first tracking circuit, a first and a second transistor. The first tracking circuit includes a first set of memory cells configured as a first set of loading cells responsive to a first control signal, a second set of memory cells configured as a first set of pull-down cells responsive to a second control signal, and a first tracking bit line extending over the first tracking circuit. The second control signal is inverted from the first control signal. At least the first set of pull-down cells or the first set of loading cells is configured to track a memory cell of the first memory cell array. The first and second transistor are coupled to the first tracking bit line, and are configured to charge the first tracking bit line to a pre-charge voltage level responsive to a third control signal.

Abstract: A memory macro includes a first memory cell array, first tracking circuit, first pre-charge circuit coupled to a first end of the first tracking bit line and a second pre-charge circuit coupled to a second end of the first tracking bit line. The first tracking circuit includes a first set of memory cells configured as a first set of loading cells responsive to a first set of control signals, a second set of memory cells configured as a first set of pull-down cells responsive to a second set of control signals, and a first tracking bit line. The first set of pull-down cells and first set of loading cells are configured to track a memory cell of the first memory cell array. The first and second pre-charge circuit are configured to charge the first tracking bit line to a voltage level responsive to a third set of control signals.

Abstract: The present disclosure describes various exemplary memory storage devices that can be programmed to write electronic data into one or more memory cells in a write mode of operation and/or to read the electronic data from the one or more memory cells in a read mode of operation. The various exemplary memory storage devices can select various control lines to read the electronic data from the one or more memory cells onto data lines and/or to write the electronic data from these data lines into the one or more memory cells. In some situations, these data lines are charged, also referred to as pre-charged, to a first logical value, such as a logical one, before the various exemplary memory storage devices write the electronic data into the one or more memory cells. During this pre-charging of these data lines, the various exemplary memory storage devices electrically isolate these data lines from specialized circuitry within these exemplary memory storage devices.

Abstract: A memory macro includes a first memory cell array, first tracking circuit, first pre-charge circuit coupled to a first end of the first tracking bit line and a second pre-charge circuit coupled to a second end of the first tracking bit line. The first tracking circuit includes a first set of memory cells configured as a first set of loading cells responsive to a first set of control signals, a second set of memory cells configured as a first set of pull-down cells responsive to a second set of control signals, and a first tracking bit line. The first set of pull-down cells and first set of loading cells are configured to track a memory cell of the first memory cell array. The first and second pre-charge circuit are configured to charge the first tracking bit line to a voltage level responsive to a third set of control signals.

Abstract: Methods and apparatus are provided for adaptive optimization of low-power strategies. In one novel aspect, the device monitors one or more thermal-performance parameters and determines a plurality of operation scenarios for a plurality of corresponding low-power policies. Based on corresponding operation scenarios, the device selects corresponding low-power policy. The device applies different low-power strategy for temperature control based on low-power policies. Different low-power policy is applied to different low-power techniques, such as the DVFS, the CPU hot-plug, and the task migration. In another novel aspect, the device obtains one or more user-defined policy for each corresponding low-power technique. The selection of each low-power policy is further based on its corresponding user-defined policy. In one embodiment, the user-defined DVFS policy includes power policy, performance policy, and DVFS-balanced policy.

Abstract: A microphone with integrated speaker which includes a front casing with a front connecting portion and a front handle portion having a battery opening; a rear casing with a rear connecting portion and a rear handle portion connected to the front casing to form a first cavity with a cylindrical connecting portion and a cylindrical handle portion with a second cavity; a metallic net cover coupled with the cylindrical connecting portion; a vocal pickup support arrangement provided inside the metallic net cover between the front connecting portion and the rear connecting portion in which a vocal pickup unit is provided; a speaker positioned inside the first cavity; a pair of electrode plates positioned inside the second cavity; a circuit board affixed on the front casing; a battery cover detachably connected to the front handle portion; and an aluminum alloy handle covers the cylindrical handle portion.

Abstract: A memory macro includes a first set of memory cells, a second set of memory cells and a set of conductive lines. The first set of memory cells is arranged in columns and rows. Each memory cell of the first set of memory cells includes a voltage supply node configured to receive a first voltage of a first supply voltage or a second voltage of a second supply voltage. The second set of memory cells includes a set of retention circuits configured to supply the second voltage of the second supply voltage to the first set of memory cells during a sleep operational mode. The set of conductive lines is coupled to the set of retention circuits and the voltage supply node of each memory cell of the first set of memory cells.