Abstract: Optical devices and methods of manufacture are presented herein. In an embodiment, an optical device is provided that includes an optical package having a first surface and a second surface opposite the first surface, a laser die package having a third surface and a fourth surface opposite the third surface, wherein the first surface is planar with the third surface and the second surface is planar with the fourth surface, a first silicon support attached to both the second surface and the fourth surface, and an interposer attached to both the first surface and the third surface, wherein the interposer is free of a silicon substrate.

Abstract: A photonic assembly includes a composite die. The composite die includes: a photonic integrated circuits (PIC) die including waveguides and photonic devices therein; an electronic integrated circuits (EIC) die including semiconductor devices therein; and an embedded optical connector die contacting a top surface of the PIC die and laterally spaced from the EIC die.

Abstract: A multiplier with in-path subnormal handling includes a zero counter, a multiplication circuit, a comparator and a rounder. The zero counter receives a first mantissa and a second mantissa, and output a zero count by adding up a first trailing-zero count, a second trailing-zero count, and at least one of a first leading-zero count and a second leading-zero count. The multiplication circuit outputs a mantissa product by multiplying the first mantissa and the second mantissa. The comparator outputs a sticky bit by comparing the zero count and a sticky portion width varying according to the most significant bit of the mantissa product. The rounder outputs a mantissa result by performing a rounding operation according to the mantissa product and the sticky bit.

Abstract: A mixed-precision multiplication circuit that computes according to a second operand and a first operand is provided. The first operand includes an exponent and a mantissa, and the mixed-precision multiplication circuit includes a subset selector and a mantissa multiplier. The subset selector is configured to store the second operand and receive the exponent. The subset selector selects a subset from a plurality of subsets according to the exponent, with the plurality of subsets representing the second operand. The mantissa multiplier is coupled to the subset selector for receiving a multiplicand associated with the selected subset, and configured to receive the mantissa. The mantissa multiplier generates a product by performing a multiplication according to the multiplicand and the mantissa, and the mixed-precision multiplication circuit outputs a result according to the product.

Abstract: Various embodiments may provide a method of fabricating a meta-lens structure. The method may include forming a first dielectric layer in contact with a silicon wafer. The method may also include forming a second dielectric layer in contact with the first dielectric layer. A refractive index of the second dielectric layer may be different from a refractive index of the first dielectric layer. The method may further include, in patterning the second dielectric layer. The method may additionally include removing at least a portion of the silicon wafer to expose the first dielectric layer.

Abstract: A photodetector with an integrated reflective grating structure includes a substrate, an active layer disposed on the substrate, and a grating structure disposed between the substrate and the active layer. A first doped region is formed on the substrate at a location near the grating structure. A second doped region is formed on a surface of the active layer away from the grating structure. The doping type of the second doped region is different from that of the first doped region.

Abstract: An adder circuitry for adding two floating-point operands is provided. The first operand includes a first exponent and a first mantissa, the second operand includes a second exponent and a second mantissa. The adder circuitry includes a least significant bit (LSB) handler, an exponent subtractor, a near-path logic circuit, a far-path logic circuit, and a selection logic circuit. The LSB handler generates an LSB result to reflect whether LSBs of the first and second exponent are identical. The exponent subtractor computing an exponent difference between the first and second exponent. The near-path logic circuit computes a near-path result according to the first and second mantissa. The far-path logic circuit computes a far-path result according to the exponent difference, the first mantissa and the second mantissa. The selection logic circuit selects one of the near-path result and the far-path result according to the exponent difference.

Abstract: A waveguide photoelectric detector, comprising: a substrate comprising a silicon layer, the silicon layer having a silicon waveguide formed thereon; an active layer dispose on the silicon waveguide, the active layer having a first doped region formed thereon; a horizontal PIN junction formed at an area of the silicon layer below the active layer, the horizontal PIN junction comprising a second doped region, an intrinsic region, and a third doped region. A doping type of the second doped region is the same as that of the first doped region. One end of the second doped region near the intrinsic region is connected to the first doped region. The third doped region and the first doped region form a vertical PIN junction.

Abstract: Various embodiments may provide a method of fabricating a meta-lens structure. The method may include forming a first dielectric layer in contact with a silicon wafer. The method may also include forming a second dielectric layer in contact with the first dielectric layer. A refractive index of the second dielectric layer may be different from a refractive index of the first dielectric layer. The method may further include, in patterning the second dielectric layer. The method may additionally include removing at least a portion of the silicon wafer to expose the first dielectric layer.

Abstract: A waveguide photoelectric detector, comprising: a substrate comprising a silicon layer, the silicon layer having a silicon waveguide formed thereon; an active layer dispose on the silicon waveguide, the active layer having a first doped region formed thereon; a horizontal PIN junction formed at an area of the silicon layer below the active layer, the horizontal PIN junction comprising a second doped region, an intrinsic region, and a third doped region. A doping type of the second doped region is the same as that of the first doped region. One end of the second doped region near the intrinsic region is connected to the first doped region. The third doped region and the first doped region form a vertical PIN junction.

Abstract: A photodetector with an integrated reflective grating structure includes a substrate, an active layer disposed on the substrate, and a grating structure disposed between the substrate and the active layer. A first doped region is formed on the substrate at a location near the grating structure. A second doped region is formed on a surface of the active layer away from the grating structure. The doping type of the second doped region is different from that of the first doped region.

Abstract: In a novel computation device, a plurality of partial product generators is communicatively coupled to a binary number multiplier. The binary number is partitioned in the computation device into non-overlapping subsets of binary bits and each subset is coupled to one of the plurality of partial product generators. Each partial product generator, upon receiving a subset of binary bits representing a number, generates a multiplication product of the number and a predetermined constant. The multiplication products from all partial product generators are summed to generate the final product between the predetermined constant and the binary number. The partial product generators are constructed by logic gates and wires connected the logic gates including a AND gate. The partial product generators are free of memory elements.

Abstract: In a novel computation device, a plurality of partial product generators is communicatively coupled to a binary number multiplier. The binary number is partitioned in the computation device into non-overlapping subsets of binary bits and each subset is coupled to one of the plurality of partial product generators. Each partial product generator, upon receiving, a subset of binary bits representing a number, generates a multiplication product of the number and a predetermined constant. The multiplication products from all partial product generators are summed to generate the final, product between the predetermined constant and the binary number. The partial product generators are constructed by logic gates and wires connected the logic gates including a AND gate. The partial product generators are free of memory elements.

Abstract: A method is provided to integrate all active and passive integrated optical devices on a silicon (Si)-based integrated circuit (IC). A Si-based substrate, instead of a Si-on-insulator (SOI) substrate, is used for integrating the devices. Therefore, cost is down and heat dissipation efficiency is enhanced. Besides, rapid melt growth (RMG) is used for solving problems on integrating the electric circuit and the optical devices. The present invention can be used to develop a proactive optical transceivers on a standard chip; or, to fully and compatibly integrate all devices on a circuit for an optical communication chip.

Abstract: Disclosed is a two- and three-dimensional far infrared acupuncture device for therapy and rehabilitation, which includes: at least one tubular body including a far infrared ceramic material and having two ends respectively forming an opening and a ventilation hole and including an accommodation space formed between the opening and the ventilation hole; and at least one electrical heating unit having an end forming a handgrip section that includes a control device mounted thereto. The electrical heating unit has an end opposite to the handgrip section and insertable through the opening into the tubular body. The control device controls the temperature of the electrical heating unit in a range of 37-50 degrees Celsius so that the temperature is transmitted to the tubular body so that the tubular body emits far infrared light having a wavelength of 4-14 micrometers to stimulate the acupoints and organs of the human body.

Abstract: The present disclosure provides a carrier channel with an element concentration gradient distribution. The carrier channel includes a substrate and a carrier channel structure. The carrier channel structure is stacked on the substrate, wherein a ratio of a height and a width of the carrier channel is greater than 1, and the carrier channel is crystallized from the contact surface by a rapid melting growth process, thus the carrier channel structure has the element concentration gradient distribution.

Abstract: The present disclosure provides a carrier channel with an element concentration gradient distribution. The carrier channel includes a substrate and a carrier channel structure. The carrier channel structure is stacked on the substrate, wherein a ratio of a height and a width of the carrier channel is greater than 1, and the carrier channel is crystallized from the contact surface by a rapid melting growth process, thus the carrier channel structure has the element concentration gradient distribution.

Abstract: A method is provided to integrate all active and passive integrated optical devices on a silicon (Si)-based integrated circuit (IC). A Si-based substrate, instead of a Si-on-insulator (SOI) substrate, is used for integrating the devices. Therefore, cost is down and heat dissipation efficiency is enhanced. Besides, rapid melt growth (RMG) is used for solving problems on integrating the electric circuit and the optical devices. The present invention can be used to develop a proactive optical transceivers on a standard chip; or, to fully and compatibly integrate all devices on a circuit for an optical communication chip.

Abstract: A method for encoding or decoding digital data, a data dissemination device and a data managing device are provided. The method for encoding digital data includes the following steps. A digital data is received. A sign data is encoded into the digital data through a linear combination operation to obtain an encoded digital data, wherein the size of the digital data is not changed after the encoding process. The encoded digital data is disseminated.

Abstract: In a novel computation device, a plurality of partial product generators is communicatively coupled to a random number. The random number is partitioned in the computation device into non-overlapping subsets of binary bits and each subset is coupled to one of the plurality of partial product generators. Each partial product generator, upon receiving a subset of binary bits representing a number, generates a multiplication product of the number and a predetermined constant. The multiplication products from all partial product generators are summed to generate the final product between the predetermined constant and the random number.