Patents by Inventor Kuo Tsung-Min

Kuo Tsung-Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR PROCESS
    Publication number: 20110014784
    Abstract: A semiconductor process is provided. First, a substrate having a dielectric layer formed thereon is provided. Thereafter, an interconnection structure including copper is formed in the dielectric layer. Afterwards, a metal layer is formed on the dielectric layer. The metal layer is then patterned to form a pad. An annealing process is performed, wherein the gas source for the annealing process includes hydrogen in a concentration of 50% to 90%.
    Type: Application
    Filed: July 17, 2009
    Publication date: January 20, 2011
    Applicant: United Microelectronics Corp.
    Inventors: Fang Chun-Chileh, Chen Po-Jong, Kuo Tsung-Min