Abstract: A method for forming a polysilicon germanium layer on a gate oxide layer without forming a polysilicon seed layer previously is disclosed. The method uses a chemical vapor deposition process at a temperature range between about 500° C. to about 600° C. by using a Si2H6 (disilane) gas and a germanium-containing gas as precursors to form a polysilicon germanium layer on a gate dielectric layer as a gate electrode layer. The polysilicon germanium layer directly formed on the gate dielectric layer has a smooth surface.

Abstract: A method for reducing surface hump phenomena of a doped amorphous silicon layer. A dielectric layer is formed on the device, and subsequently, is patterned to form openings for exposure of the electrode surface of the device. A first deposition step is performed to form a conformal first doped amorphous silicon layer in the opening and on the dielectric layer. A second deposition step is performed to form an undoped or a lightly doped amorphous silicon layer on the first doped amorphous silicon layer and filling the openings completely. A third deposition step is performed to form a second doped amorphous silicon layer on the undoped or a lightly doped amorphous silicon layer.

Abstract: A method and an apparatus for detecting the crack of a heater of an acid and rinse bath, acid and rinse bath is filled with acid solution, a heater is used to heat the acid solution. A heater is constituted of a hollow quartz tube with one closed end and one open end, the closed end is submerged into acid solution, part of the quartz tube is exposure in the air. The heated filament is inserted into the open end of the heater through the closed end of the heater, moisture detecting device is attached on the inner side wall of the quartz tube, use chemicals that will change color by absorbing moisture, or use electronic component to detect the humidity, monitoring the variation of moisture in the quartz tube to acknowledge is there any crack of the quartz tube, and replace the defect quartz tube before too late.

Abstract: A horizontal-type silicon-nitride furnace (HOSINF) having two tubes is provided. The HOSINF includes an outer tube and an inner tube. One end of the outer tube is coupled to a pump. The other end of the outer tube can be well sealed by a door through a flange. The inner tube is located inside the outer tube. The inner tube has a closed end and an opened end, in which the opened end is near to the door, and the closed end is near to the pump. The inner tube includes a first gas inlet and a second gas inlet. Desired reaction gases are flushed into the inner tube from the first inlet and the second inlet. The inner tube surrounds a paddle carrying several wafers, on which a silicon nitride layer is to be formed. The paddle is mounted on the door. A heater is located on a side periphery of the outer tube.