Abstract: The invention provides a manufacturing method of a semiconductor structure, which includes the following. A substrate is provided. The substrate includes a region of a first conductivity type. A patterned photoresist layer is formed on the substrate. The patterned photoresist layer includes a main portion and a split portion separated from each other. An ion implantation process is performed on the substrate by using the patterned photoresist layer as a mask to form a well region in the region of the first conductivity type. The well region has a second conductivity type. The main portion and the split portion are adjacent to the same end terminal of the well region.