Abstract: The invention relates to a lid structure of disposable beverage cups, a buckle portion is set on a lid rim of the lid, an inner containing groove is set on the buckle portion for the rim flange being buckled and placed inside, wherein, at least an elastic gap is set on the lid rim of the lid, two sides of the elastic gap has a moderate separated elasticity so as to combine with beverage cups manufactured by different manufacturers.

Abstract: The invention relates to a lid structure of disposable beverage cups, a buckle portion is set on a lid rim of the lid, an inner containing groove is set on the buckle portion for the rim flange being buckled and placed inside, wherein, at least an elastic gap is set on the lid rim of the lid, two sides of the elastic gap has a moderate separated elasticity so as to combine with beverage cups manufactured by different manufacturers.

Abstract: An erasing method for a non-volatile memory is provided. The method includes the following two major steps. (a) A first voltage is applied to the odd-numbered select gates of each memory row and a second voltage is applied to the even-numbered select gates of each memory row such that the voltage difference between the first voltage and the second voltage is large enough for the electrons injected into the floating gate of the memory cells to be removed via the select gate. (b) A switchover operation is performed so that the first voltage is applied to the even-numbered select gates of each memory row and the second voltage is applied to the odd-numbered select gates of each memory row such that the electrons injected into the floating gates of the memory cells are pulled away via the select gates to turn the memory cells into an erased state.

Abstract: An erasing method for a non-volatile memory is provided. The method includes the following two major steps. (a) A first voltage is applied to the odd-numbered select gates of each memory row and a second voltage is applied to the even-numbered select gates of each memory row such that the voltage difference between the first voltage and the second voltage is large enough for the electrons injected into the floating gate of the memory cells to be removed via the select gate. (b) A switchover operation is performed so that the first voltage is applied to the even-numbered select gates of each memory row and the second voltage is applied to the odd-numbered select gates of each memory row such that the electrons injected into the floating gates of the memory cells are pulled away via the select gates to turn the memory cells into an erased state.