Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: A system, a gateway, and a method for automatic setting configuration by learning commands are provided. The invention collects communication commands sent in a first network, stores target data accessed by a first device in the first network according to the communication command to an address, and maps the address to an I/O module used to access the target data by a second device. The system and the method can set the configuration of a gateway automatically, and achieve the effect of enhancing the efficiency of gateway configuration setting.

Abstract: A system, a gateway, and a method for automatic setting configuration by learning commands are provided. The invention collects communication commands sent in a first network, stores target data accessed by a first device in the first network according to the communication command to an address, and maps the address to an I/O module used to access the target data by a second device. The system and the method can set the configuration of a gateway automatically, and achieve the effect of enhancing the efficiency of gateway configuration setting.

Abstract: A charge pump circuit is provided which includes at least two charge pump stages connected in series with a front charge pump stage having a first transistor for receiving an input voltage and a last charge pump stage having a second transistor for providing an output voltage. The first transistor is configured to operate at a first threshold voltage and the second transistor is configured to operate at a second threshold voltage different than the first threshold voltage.

Abstract: A charge pump circuit is provided which includes at least two charge pump stages connected in series with a front charge pump stage having a first transistor for receiving an input voltage and a last charge pump stage having a second transistor for providing an output voltage. The first transistor is configured to operate at a first threshold voltage and the second transistor is configured to operate at a second threshold voltage different than the first threshold voltage.

Abstract: A method for forming triple polysilicon split gate electrodes in a EEPROM flash memory array providing a first gate structure; blanket depositing a first polysilicon layer over the first gate structure; etching back the first polysilicon layer according to a first dry etching process; blanket depositing a second dielectric insulating layer over the first polysilicon layer; blanket depositing a second polysilicon layer over the second dielectric insulating layer; and, lithographically patterning and dry etching according to a respective third and fourth dry etching process through a thickness portion of the respective second and first polysilicon layers to respectively form third and second polysilicon gate electrodes.

Abstract: A method for forming triple polysilicon split gate electrodes in a EEPROM flash memory array providing a first gate structure; blanket depositing a first polysilicon layer over the first gate structure; etching back the first polysilicon layer according to a first dry etching process; blanket depositing a second dielectric insulating layer over the first polysilicon layer; blanket depositing a second polysilicon layer over the second dielectric insulating layer; and, lithographically patterning and dry etching according to a respective third and fourth dry etching process through a thickness portion of the respective second and first polysilicon layers to respectively form third and second polysilicon gate electrodes.

Abstract: The present invention relates to a fast diffusion recipe for making silicon by NO complexes, which can quicken impurities diffusion by NO complexes, thus reducing effectiveness for a given period of time and cost of production. When it is used to make CMOS well, processing period would be more rapidly. Because of the produced interface depth is affected by ventilation at stage of heat treatment, and obtaining deeper depth by N2O compared with using traditional N2, it is thus clear that this recipe features application and use value.