Abstract: The present invention is to provide a method for forming a compound epitaxial layer by chemical bonding, which comprises the steps of forming a contact layer on a substrate; chemically reacting atoms on a surface of the contact layer with non-metal atoms, such that the non-metal atoms form non-metal ions for chemically bonding to the atoms on the surface of the contact layer; exciting the non-metal ions by energy excitation, such that unpaired electrons of the non-metal ions not yet bound to the atoms on the surface of the contact layer become dangling bonds; and conducting chemical vapor deposition by introducing an organic metal compound and a reactant gas, wherein metal ions of the organic metal compound are bound to the dangling bonds by electric dipole attraction, and anions of the reactant gas are bound to the metal ions by ionic bonding, such that the compound epitaxial layer is formed.

Abstract: The present invention is to provide a method for forming a compound epitaxial layer by chemical bonding, which comprises the steps of forming a contact layer on a substrate; chemically reacting atoms on a surface of the contact layer with non-metal atoms, such that the non-metal atoms form non-metal ions for chemically bonding to the atoms on the surface of the contact layer; exciting the non-metal ions by energy excitation, such that unpaired electrons of the non-metal ions not yet bound to the atoms on the surface of the contact layer become dangling bonds; and conducting chemical vapor deposition by introducing an organic metal compound and a reactant gas, wherein metal ions of the organic metal compound are bound to the dangling bonds by electric dipole attraction, and anions of the reactant gas are bound to the metal ions by ionic bonding, such that the compound epitaxial layer is formed.

Abstract: An etching method with less waste gases. Firstly, provide a substrate covered by a dielectric layer, and put both the substrate and the dielectric layer into a chamber that is coupled with a power source and a C3F8 reactive gases source. Next, provide a plasma inside the chamber under an environment with a low RF power, and a low pressure. Finally, terminate the existence of the plasma and move both the substrate and the etched dielectric later out the chamber.

Abstract: An apparatus and a method for monitoring the ion concentration in an etching chamber of a sputter etch process are described, wherein the DC bias of a pre-clean process for a sputter etch process is acquired. The parameters of the pre-clean process for the sputter etch process are then adjusted according to the value of the monitored DC bias. The DC bias thus varies within a certain range to provide a steady control of the ion concentration and to reduce the defects formed in the wafer.