Abstract: A voltage-controlled oscillator includes an input circuit, a first current supply circuit, a second current supply circuit, a filtering circuit, and an oscillating circuit. The input circuit includes an operational amplifier and a first input transistor. The operational amplifier generates an output voltage according to an input voltage and a feedback voltage. The first input transistor generates an input current according to the output voltage and a power supply voltage. The first current supply circuit generates a first output current according to the input current. The second current supply circuit generates a second output current according to the input current. The filtering circuit couples to the input circuit and the second current supply circuit, and decrease an influence caused by a variation of the input current on the second current supply circuit. The oscillating circuit generates an output clock according to the first output current and the second output current.

Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.

Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.

Abstract: A protective film thickness measuring method includes a step of applying light to a top surface of a wafer in a state in which no protective film is formed and measuring a first reflection intensity of the light reflected from the top surface, a step of forming the protective film including a light absorbing material, a step of irradiating the protective film with exciting light of a wavelength at which the light absorbing material fluoresces and measuring a second reflection intensity including fluorescence of the protective film and the light reflected from the top surface, and a step of excluding reflection intensity of patterns formed on the top surface, by subtracting the measured first reflection intensity from the measured second reflection intensity, and calculating fluorescence intensity of the protective film.

Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.

Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.

Abstract: A protective film thickness measuring method includes a step of applying light to a top surface of a wafer in a state in which no protective film is formed and measuring a first reflection intensity of the light reflected from the top surface, a step of forming the protective film including a light absorbing material, a step of irradiating the protective film with exciting light of a wavelength at which the light absorbing material fluoresces and measuring a second reflection intensity including fluorescence of the protective film and the light reflected from the top surface, and a step of excluding reflection intensity of patterns formed on the top surface, by subtracting the measured first reflection intensity from the measured second reflection intensity, and calculating fluorescence intensity of the protective film.

Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.

Abstract: A laser processing apparatus includes a laser beam applying unit for applying a laser beam to a workpiece, an image capturing unit for producing a captured image of the workpiece that includes a captured image of light emitted from the workpiece when the laser beam is applied to the workpiece by the laser beam applying unit, and a control unit. The laser beam applying unit includes a laser oscillator for emitting a laser beam and a condensing lens for converging the laser beam onto the workpiece. The control unit includes a determining section for determining a state of the laser beam applied to the workpiece, on the basis of the shape of the captured image of the light that is included in the captured image of the workpiece.

Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.

Abstract: A hand-held image-capturing electronic device with ability to compensate for unstable rotation and images during 360-degree panoramic captures includes a display screen, a first lens unit, a second lens unit, and a third lens unit. The first lens unit and the second lens unit are positioned on opposing surfaces, the third lens unit is independently rotatable on the electronic device and can cooperate with the first lens unit and the second lens unit to capture images which are refined and synthesized together by the device. A method for capturing such images with such device is also disclosed.

Abstract: Disclosed is a voltage-controlled oscillator (VCO) capable of providing an effective high VCO gain against slow change of an input voltage caused by the variation of manufacturing processes, temperature, voltage, etc. and providing an effective low VCO gain against rapid change of the input voltage for reducing jitter. The VCO includes: an input circuit generating an input current according to an input voltage; a first current supply circuit generating a first output current according to the input current; a second current supply circuit generating a second output current according to the input current; a filter coupled to the input circuit and the second current supply circuit and configured to slow down the influence caused by the variation of the input current on the second current supply circuit; and an oscillating circuit generating an output clock according to the first output current and the second output current.

Abstract: A smart control system for monitoring a bathroom includes a server, a smart toilet, a smart door handle, and a roller. The smart toilet includes a first sensor configured to detect whether the smart toilet is clean and send a first detection result to the server. The smart door handle includes a second sensor configured to detect whether the door of the bathroom is in an open state or a closed state and send a second detection result to the server. The roller includes a third sensor configured to detect a usage of the toilet paper on the roller and send a third detection result to the server. The server analyzes the first detection result, the second detection result, and the third detection result to obtain an analysis result. The server performs corresponding operations according to the analysis result.

Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.

Abstract: A hand-held image-capturing electronic device with ability to compensate for unstable rotation and images during 360-degree panoramic captures includes a display screen, a first lens unit, a second lens unit, and a third lens unit. The first lens unit and the second lens unit are positioned on opposing surfaces, the third lens unit is independently rotatable on the electronic device and can cooperate with the first lens unit and the second lens unit to capture images which are refined and synthesized together by the device. A method for capturing such images with such device is also disclosed.

Abstract: Disclosed is a voltage-controlled oscillator (VCO) capable of providing an effective high VCO gain against slow change of an input voltage caused by the variation of manufacturing processes, temperature, voltage, etc. and providing an effective low VCO gain against rapid change of the input voltage for reducing jitter. The VCO includes: an input circuit generating an input current according to an input voltage; a first current supply circuit generating a first output current according to the input current; a second current supply circuit generating a second output current according to the input current; a filter coupled to the input circuit and the second current supply circuit and configured to slow down the influence caused by the variation of the input current on the second current supply circuit; and an oscillating circuit generating an output clock according to the first output current and the second output current.

Abstract: Disclosed is a voltage-controlled oscillator (VCO) capable of providing an effective high VCO gain against slow change of an input voltage caused by the variation of manufacturing processes, temperature, voltage, etc. and providing an effective low VCO gain against rapid change of the input voltage for reducing jitter. The VCO includes: an input circuit generating an input current according to an input voltage; a first current supply circuit generating a first output current according to the input current; a second current supply circuit generating a second output current according to the input current; a filter coupled to the input circuit and the second current supply circuit and configured to slow down the influence caused by the variation of the input current on the second current supply circuit; and an oscillating circuit generating an output clock according to the first output current and the second output current.

Abstract: A smart control system for monitoring a bathroom includes a server, a smart toilet, a smart door handle, and a roller. The smart toilet includes a first sensor configured to detect whether the smart toilet is clean and send a first detection result to the server. The smart door handle includes a second sensor configured to detect whether the door of the bathroom is in an open state or a closed state and send a second detection result to the server. The roller includes a third sensor configured to detect a usage of the toilet paper on the roller and send a third detection result to the server. The server analyzes the first detection result, the second detection result, and the third detection result to obtain an analysis result. The server performs corresponding operations according to the analysis result.

Abstract: A method of manufacturing a pixel structure of a liquid crystal display panel includes providing a substrate, forming a pixel electrode and a switch device that is electrically connected to the pixel electrode on the substrate, forming an insulating layer that covers the switch device and the pixel electrode on the substrate, forming a common electrode layer on the insulating layer, forming a patterned photoresist layer that includes a plurality of discontinuous patterns on the common electrode layer, performing a first etching process to remove a portion of the common electrode layer so as to forma patterned common electrode, performing a second etching process to remove part of a surface of the insulating layer so as to form a plurality of trenches, wherein the patterned common electrode does not cover the plurality of trenches, and removing the patterned photoresist layer.

Abstract: Disclosed is a voltage-controlled oscillator (VCO) capable of providing an effective high VCO gain against slow change of an input voltage caused by the variation of manufacturing processes, temperature, voltage, etc. and providing an effective low VCO gain against rapid change of the input voltage for reducing jitter. The VCO includes: an input circuit generating an input current according to an input voltage; a first current supply circuit generating a first output current according to the input current; a second current supply circuit generating a second output current according to the input current; a filter coupled to the input circuit and the second current supply circuit and configured to slow down the influence caused by the variation of the input current on the second current supply circuit; and an oscillating circuit generating an output clock according to the first output current and the second output current.