Patents by Inventor Kuo-Yang Lai

Kuo-Yang Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12218250
    Abstract: A transistor including a channel layer including an oxide semiconductor material and methods of making the same. The transistor includes a channel layer having a first oxide semiconductor layer having a first oxygen concentration, a second oxide semiconductor layer having a second oxygen concentration and a third oxide semiconductor layer having a third oxygen concentration. The second oxide semiconductor layer is located between the first semiconductor oxide layer and the third oxide semiconductor layer. The second oxygen concentration is lower than the first oxygen concentration and the third oxygen concentration.
    Type: Grant
    Filed: June 14, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kuo-Chang Chiang, Hung-Chang Sun, Sheng-Chih Lai, TsuChing Yang, Yu-Wei Jiang, Feng-Cheng Yang, Neil Quinn Murray
  • Patent number: 12219777
    Abstract: A memory cell includes a thin film transistor over a semiconductor substrate, the thin film transistor including: a memory film contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the memory film is disposed between the OS layer and the word line, wherein the source line and the bit line each comprise a first conductive material touching the OS layer, and wherein the first conductive material has a work function less than 4.6. The memory cell further includes a dielectric material separating the source line and the bit line.
    Type: Grant
    Filed: June 26, 2023
    Date of Patent: February 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Kuo-Chang Chiang, Hung-Chang Sun, Sheng-Chih Lai, TsuChing Yang, Yu-Wei Jiang
  • Patent number: 11341895
    Abstract: A method for application in a QLED display device is provided for cancelling optical crosstalk occurring in a QLED display panel consisting of M number of anode wires, N number of cathode wires, and M×N number of QLED elements. In case of the method being implemented in the QLED display device, a control unit is configured for controlling a column driver unit to supply a positive bias voltage to at least one QLED element that is addressingly selected. In the meantime, the control unit also controls a low driver unit to supply a reverse bias voltage to each of the QLED elements that are not selected. In such case, when the addressingly-selected QLED element achieves a light emission normally, each of the QLED elements that are not selected is reversely biased for failing to produce optical crosstalk.
    Type: Grant
    Filed: July 2, 2020
    Date of Patent: May 24, 2022
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Kuo-Yang Lai, Hsueh-Shih Chen