Patents by Inventor Kuo Yang Ma

Kuo Yang Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200126824
    Abstract: A super thin heating disk includes an upper cover made of metal, the upper cover being formed with a receiving groove; a lower cover made of metal and installed within the receiving groove; the heating coil being distributed in the receiving groove; a heating coil installed within the receiving groove, two ends of the heating coil being installed with two electrodes, respectively, which are connected to external positive and negative electrodes for current conduction; a thermal couple installed in the receiving groove for detecting temperatures of the heating coil; the thermal couple being connected to two connection wires for conducting external transmission lines so that detection temperature data can be transferred out; and two insulation layers installed in the receiving groove and at an upper and a lower side of the heating coil.
    Type: Application
    Filed: October 17, 2018
    Publication date: April 23, 2020
    Inventors: Kuo Yang Ma, Mu-Chun Ho, Wei-Chuan Chou, Pei-Shan Li, Yi Hsiang Chen, Cheng Feng Li
  • Publication number: 20190311927
    Abstract: An aluminum adhering process and a vacuum transfer chamber for a metal thin film plating machine. The vacuum transfer chamber includes a vacuum transfer chamber and a pre etching reacting cavity installed in a periphery of and communicated to the vacuum transfer chamber. The pre etching reacting cavity is in a very high vacuum state. The vacuum transfer chamber is installed with a robot. The aluminum adhering process includes steps of: installing a locating frame in the vacuum transfer chamber and for storing an aluminum sheet; taking the aluminum sheet from the locating sheet then transferring the aluminum sheet to the pre etching reaction chamber; plasma bombarding the aluminum sheet in the pre etching reaction chamber; and transferring the aluminum sheet back to the locating frame after a layer of aluminum is plated on an inner wall of the pre etching reacting cavity.
    Type: Application
    Filed: April 10, 2018
    Publication date: October 10, 2019
    Inventors: Chen-Feng Li, Wei-Liang Chan, Kuo-Yang Ma, Ching-Liang I, Yu-Hung Huang
  • Publication number: 20190279887
    Abstract: A vapor reduction device for a semiconductor wafer has a plurality of heat plates which are spaced arranged longitudinally for receiving a plurality of wafers, the heat plates are integrated into a heating frame which is further placed into a casing. The movements of the heat plates within the casing causes that the wafers can be heated rapidly and uniformly so as to evaporated vapor effectively. The heat plates are separable from the heating frame and thus a number of the heat plates is selectable as desired. The heating temperature for the heat plates is controllable independently so that the temperatures of the wafers are controllable so that the temperature differences of the wafers are controllable to be uniformly distributed.
    Type: Application
    Filed: March 7, 2018
    Publication date: September 12, 2019
    Inventors: Kuo Yang Ma, Zhi Kai Huang, Mu-Chun Ho, Wei Chuan Chou, Chun-Fu Wang, Yi-Hsiang Chen, Ying Hsien Cheng