Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: A writing apparatus with massaging means, including an upper barrel, a bottom barrel, a refill, and a massaging unit, the massaging unit including a battery, a vibrating motor, a button switch, and a massager head, wherein the massaging unit is mounted inside the upper barrel; the massager head is mounted on the button switch and extending out of the upper barrel, the massager head triggering the button switch to turn the vibrating motor when it is pressed against a part of the body to be massaged; the button switch is mounted in a mounting device retained above the vibrating motor; the battery is disposed below the vibrating motor.