Abstract: An interconnect structure comprises a first dielectric layer, a first metal layer, a second dielectric layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer. The first metal layer comprises a first portion and a second portion spaced apart from the first portion. The second dielectric layer is over the first metal layer. The metal via has an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first metal layer, and a lower portion in the first dielectric layer. The second metal layer is over the metal via. From a top view the second metal layer comprises a metal line having longitudinal sides respectively set back from opposite sides of the first portion of the first metal layer.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: An apparatus includes a vacuum chamber, a reflective optical element arranged in the vacuum chamber and configured to reflect an extreme ultra-violet (EUV) light, and a cleaning module positioned in the vacuum chamber. the cleaning module is operable to provide a mitigation gas flowing towards the reflective optical element and provide a hydrogen-containing gas flowing towards the reflective optical element. The mitigation gas mitigates, by chemical reaction, contamination of the reflective optical element.

Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.

Abstract: A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.

Abstract: A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.

Abstract: A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.

Abstract: A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.

Abstract: An electronic device package includes a carrying board, an electronic device, a first insulating layer, and a barrier layer. The carrying board includes a central area, an inner edge area, and an outer edge area. The inner edge area is located between the central area and the outer edge area. The electronic device is located in the central area. The first insulating layer is located on the carrying board and overlapped with the electronic device and extends from the central area to the inner edge area. The barrier layer is located on the carrying board. Here, the barrier layer includes a sidewall contact portion and an extending portion. The sidewall contact portion surrounds a side surface of the first insulating layer, and the extending portion extends from the sidewall contact portion to the outer edge area in a direction away from the first insulating layer.

Abstract: A pixel structure includes data lines disposed along a first direction, scan lines disposed along a second direction and pixel units periodically disposed along the first and the second directions. In a first pixel unit, a first switch element is coupled to a first scan line and a first data line, the second switch element is coupled to the first scan line, and a third switch element is coupled to the first scan line. In a second pixel unit, a fourth switch element is coupled to a second scan line, the first data line and the second switch element, and a fifth switch element is electrically coupled to the second scan line and the third switch element. In a third pixel unit, a sixth switch element is coupled to a third scan line, the first data line and the fifth switch element.

Abstract: In some embodiments, a maintenance apparatus is provided for maintaining semiconductor processing equipment. The maintenance apparatus has an articulated member having a first member with a handle engagement portion and a second member with a first tool engagement portion. The first member is rotationally coupled to the first member about an articulation axis. A first tool member in selective engagement with the first tool engagement portion of the second member.

Abstract: A pixel structure includes data lines disposed along a first direction, scan lines disposed along a second direction and pixel units periodically disposed along the first and the second directions. In a first pixel unit, a first switch element is coupled to a first scan line and a first data line, the second switch element is coupled to the first scan line, and a third switch element is coupled to the first scan line. In a second pixel unit, a fourth switch element is coupled to a second scan line, the first data line and the second switch element, and a fifth switch element is electrically coupled to the second scan line and the third switch element. In a third pixel unit, a sixth switch element is coupled to a third scan line, the first data line and the fifth switch element.

Abstract: An electronic device package includes a carrying board, an electronic device, a first insulating layer, and a barrier layer. The carrying board includes a central area, an inner edge area, and an outer edge area. The inner edge area is located between the central area and the outer edge area. The electronic device is located in the central area. The first insulating layer is located on the carrying board and overlapped with the electronic device and extends from the central area to the inner edge area. The barrier layer is located on the carrying board. Here, the barrier layer includes a sidewall contact portion and an extending portion. The sidewall contact portion surrounds a side surface of the first insulating layer, and the extending portion extends from the sidewall contact portion to the outer edge area in a direction away from the first insulating layer.

Abstract: In some embodiments, a maintenance apparatus is provided for maintaining semiconductor processing equipment. The maintenance apparatus has an articulated member having a first member with a handle engagement portion and a second member with a first tool engagement portion. The first member is rotationally coupled to the first member about an articulation axis. A first tool member in selective engagement with the first tool engagement portion of the second member.

Abstract: A swinging bucket centrifuge rotor having a conforming bucket seat which includes a plurality of cavities evenly spaced about its vertical axis. Each has a seat portion that with an inward profile generally following the profile of a swinging bucket, subjected to centrifugal forces. A passageway extends entirely through the rotor head and includes a slot extending radially outward from the passageway, positioned so as to bifurcate the seat portion. Located between the vertical axis and the passageway is an improved hanging mechanism that reduces the likelihood of improperly mounting a swinging bucket onto the rotor. Three embodiments of the hanging mechanism are disclosed, each of which is integrally formed with the inner wall of each cavity. The hanging mechanism is positioned so that during centrifugation, the seat portion of the rotor will bear the full centrifugal force of the bucket.