Abstract: The disclosure provides a silicon-based suspending antenna with photonic bandgap structure, which includes a silicon substrate, an electrode layer, a spacing part and an F-shaped structure. The silicon substrate has a first side surface and a second side surface oppositing to the first surface. The electrode layer has a flat part, a first base and at least one second base, in which one side of the flat part has a notch, the first base, the second base and the notch are separately disposed on the second side surface and essentially parallel to the longitudinal edge of the second side surface, the first base has a main body and an extension, and the extension extends from the main body and into the notch. The F-shaped structure has a longitudinal part disposed on the spacing part and is parallel to the second side surface.

Abstract: The disclosure provides a silicon-based suspending antenna with photonic bandgap structure which manufactured by IC thin film process, surface micromachining and bulk Micromachining are provided. The silicon-based suspending antenna with photonic bandgap structure includes a silicon substrate, an electrode layer, a spacing part and an F-shaped structure. The silicon substrate has a first side surface and a second side surface oppositing to the first surface, the first side surface has a plurality of regular recesses and the second side surface has a longitudinal edge. The electrode layer has a flat part, a first base and at least one second base, in which one side of the flat part has a notch, the first base, the second base and the notch are separately disposed on the second side surface and essentially parallel to the longitudinal edge of the second side surface, the first base has a main body and an extension, and the extension extends from the main body and into the notch.