Patents by Inventor Kuo-Yuan Lee
Kuo-Yuan Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11973133Abstract: A method for fabricating a semiconductor device includes the steps of providing a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, forming a first mesa isolation on the HEMT region and a second mesa isolation on the capacitor region, forming a HEMT on the first mesa isolation, and then forming a capacitor on the second mesa isolation.Type: GrantFiled: May 8, 2023Date of Patent: April 30, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Sheng-Yuan Hsueh, Chien-Liang Wu, Kuo-Yu Liao
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Publication number: 20240130140Abstract: A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.Type: ApplicationFiled: December 26, 2023Publication date: April 18, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ting-Hsiang Huang, Yi-Chung Sheng, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
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Patent number: 11956974Abstract: The invention discloses a memory fabrication method. The memory fabrication method includes forming a plurality of gate electrode lines to respectively form a plurality of gates of a plurality of data storage cells, and forming a plurality of conductive lines. The plurality of data storage cells are arranged in an array. Each of the plurality of conductive lines is coupled to two of the plurality of gate electrode lines. Each of the plurality of conductive lines at least partially overlaps the two gate electrode lines of the plurality of gate electrode lines.Type: GrantFiled: October 19, 2020Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Sheng-Yuan Hsueh
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Publication number: 20240090234Abstract: A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).Type: ApplicationFiled: November 17, 2023Publication date: March 14, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Sheng-Yuan Hsueh, Te-Wei Yeh, Chien-Liang Wu
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Publication number: 20240074329Abstract: The present invention provides a semiconductor device and a method of forming the same, and the semiconductor device includes a substrate, a first interconnect layer and a second interconnect layer. The first interconnect layer is disposed on the substrate, and the first interconnect layer includes a first dielectric layer around a plurality of first magnetic tunneling junction (MTJ) structures. The second interconnect layer is disposed on the first interconnect layer, and the second interconnect layer includes a second dielectric layer around a plurality of second MTJ structures, wherein, the second MTJ structures and the first MTJ structures are alternately arranged along a direction. The semiconductor device may obtain a reduced size of each bit cell under a permissible process window, so as to improve the integration of components.Type: ApplicationFiled: November 8, 2023Publication date: February 29, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chun-Hsien Lin, Sheng-Yuan Hsueh
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Patent number: 8815645Abstract: A multi-chip stacking method to reduce voids between stacked chips is revealed. A first chip is disposed on a substrate, and a plurality of first bonding wires are formed by wire bonding to electrically connect the first chip and the substrate. A second chip is disposed on an active surface of the first chip where a FOW (film over wire) adhesive is formed on a back surface of the second chip. The FOW adhesive partially encapsulates the first bonding wires and adheres to the active surface of the first chip. Then, the substrate is placed in a pressure oven to provide a positive pressure greater than one atm during thermally curing the FOW adhesive with exerted pressures. Accordingly, voids can be reduced inside the FOW adhesive during the multi-chip stacked processes where issues of poor adhesion and popcorn between chips can be avoided.Type: GrantFiled: December 5, 2011Date of Patent: August 26, 2014Assignee: Walton Advanced Engineering, Inc.Inventors: Kuo-Yuan Lee, Yung-Hsiang Chen, Wen-Chun Chiu
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Publication number: 20130266923Abstract: An interactive multimedia instructional system and device include a wireless guidance unit used by an instructor and plural wireless interaction units used by pupils. The wireless guidance unit and the wireless interaction units are connected wirelessly with a computer host loaded with a multisite and point-and-click operating system and instructional software. A display unit is connected with the computer host to display execution pictures of the instructional software and to display pointers by the wireless guidance unit and the wireless interaction units. The instructional software includes a group management program and a lesson plan editing interface on the display unit. As a result, one-to-many interactive multimedia teaching that is more enriched, vivid and effective can be achieved through this electronic instructional system, between the instructor and the pupils.Type: ApplicationFiled: April 10, 2012Publication date: October 10, 2013Inventor: Kuo-Yuan Lee
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Patent number: 8361841Abstract: Disclosed is a mold array process (MAP) method to encapsulate cut edges of substrate units. A substrate strip includes a plurality of substrate units arranged in a matrix. Scribe lines are defined between adjacent substrate units and at the peripheries of the matrix where pre-cut grooves are formed along the scribe lines with a width greater than the width of the scribe lines. An encapsulant is formed on the matrix of the substrate strip to continuously encapsulate the substrate units and the scribe lines to enable the encapsulant to fill into the pre-cut grooves to further encapsulate the cut edges of the substrate units. The cut edges of the substrate units are still encapsulated by the encapsulant even after singulation processes where substrate units are singulated into individual semiconductor packages to prevent the exposure of the plated traces of the substrate units to enhance the moisture resistance capability of the semiconductor packages.Type: GrantFiled: April 25, 2011Date of Patent: January 29, 2013Assignee: Walton Advanced Engineering, Inc.Inventors: Kuo-Yuan Lee, Yung-Hsiang Chen, Wen-Chun Chiu
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Publication number: 20120270368Abstract: Disclosed is a mold array process (MAP) method to encapsulate cut edges of substrate units. A substrate strip includes a plurality of substrate units arranged in a matrix. Scribe lines are defined between adjacent substrate units and at the peripheries of the matrix where pre-cut grooves are formed along the scribe lines with a width greater than the width of the scribe lines. An encapsulant is formed on the matrix of the substrate strip to continuously encapsulate the substrate units and the scribe lines to enable the encapsulant to fill into the pre-cut grooves to further encapsulate the cut edges of the substrate units. The cut edges of the substrate units are still encapsulated by the encapsulant even after singulation processes where substrate units are singulated into individual semiconductor packages to prevent the exposure of the plated traces of the substrate units to enhance the moisture resistance capability of the semiconductor packages.Type: ApplicationFiled: April 25, 2011Publication date: October 25, 2012Inventors: Kuo-Yuan LEE, Yung-Hsiang Chen, Wen-Chun Chiu
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Publication number: 20120264257Abstract: Disclosed is a mold array process (MAP) method to prevent exposure of peripheries of substrate units where the major characteristic is to implement two kinds of encapsulating materials in the MAP method in mass production. A first encapsulating material for encapsulating chips is formed on a substrate strip by molding to continuously encapsulate the substrate units and the scribe lines between adjacent substrate units. Prior to forming a second encapsulating material, a plurality of cut grooves are formed along the scribing lines by pre-cutting processes to penetrate through the substrate strip but without penetrating through the first encapsulating material and have such a width that a plurality of peripheries of the substrate units are exposed outside the scribing lines. Then, the second encapsulating material is filled into the cut grooves.Type: ApplicationFiled: April 14, 2011Publication date: October 18, 2012Inventors: Kuo-Yuan Lee, Yung-Hsiang Chen, Wen-Chun Chiu
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Publication number: 20120187598Abstract: Disclosed are a method and an apparatus of compression molding to reduce voids in molding compounds of semiconductor packages. A compression mold jig set including a top mold and a bottom mold is provided and disposed inside a pressure chamber. A substrate disposed with chips is loaded on the top mold. An encapsulating material is filled in the cavity of the bottom mold. When heating the bottom mold to melt the encapsulating material, a positive air pressure more than 1 atm is provided in the pressure chamber in order to expel or reduce any bubbles trapped inside the encapsulating material. Then, the top mold is pressed downward to clamp with the bottom mold under the heating and high-pressure condition until the encapsulating material is pre-cured to transform a molding compound adhered to the substrate. Therefore, potential bubble trapped inside the molding compound can be eliminated or reduced to improve production yield, reliability and life time.Type: ApplicationFiled: August 22, 2011Publication date: July 26, 2012Inventors: Kuo-Yuan LEE, Yung-Hsiang Chen
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Publication number: 20120115277Abstract: A multi-chip stacking method to reduce voids between stacked chips is revealed. A first chip is disposed on a substrate, and a plurality of first bonding wires are formed by wire bonding to electrically connect the first chip and the substrate. A second chip is disposed on an active surface of the first chip where a FOW (film over wire) adhesive is formed on a back surface of the second chip. The FOW adhesive partially encapsulates the first bonding wires and adheres to the active surface of the first chip. Then, the substrate is placed in a pressure oven to provide a positive pressure greater than one atm during thermally curing the FOW adhesive with exerted pressures. Accordingly, voids can be reduced inside the FOW adhesive during the multi-chip stacked processes where issues of poor adhesion and popcorn between chips can be avoided.Type: ApplicationFiled: December 5, 2011Publication date: May 10, 2012Applicant: Walton Advanced Engineering Inc.Inventors: Kuo-Yuan LEE, Yung-Hsiang Chen, Wen-Chun Chiu
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Publication number: 20120077312Abstract: Disclosed is a flip-chip bonding method to reduce voids in underfill material. A substrate with connecting pads is provided. At least a chip with a plurality of bumps is bonded on the substrate and then an underfill material is formed between the chip and the substrate. Finally, the substrate is placed in a pressure oven in which a positive pressure greater than one atm is provided, meanwhile, the underfill material is thermally cured with exerted pressures to reduce bubbles or voids trapped inside the underfill material to avoid popcorn issues due to CTE mismatch between the chip and the substrate. In one embodiment, another underfill material is further formed between a plurality of chips and bubbles or voids trapped between the chips are also reduced by the pressurized curing.Type: ApplicationFiled: March 17, 2011Publication date: March 29, 2012Inventors: Kuo-Yuan LEE, Yung-Hsiang Chen, Wen-Chun Chiu, Kao-Hsiung Lin
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Patent number: 8112854Abstract: A tool holding device is disposed between a headstock unit and a tailstock unit of a five-axis lathe, and includes a saddle driven to move longitudinally, a cross-slide riding on the saddle and driven to move transversely, a turntable platform disposed on a base mount that is disposed on the cross-slide and driven to revolve about an upright axis, and a tool post mounted on a base rest that is disposed on the turntable platform and driven to move uprightly. An indexable turret is disposed on the tool post for holding tool bits such that the five-axis lathe can perform movements about five axes to machine a workpiece so as to obtain a complicated geometric shape, thereby reducing setup time and errors and increasing production.Type: GrantFiled: April 5, 2010Date of Patent: February 14, 2012Assignee: Wey Yii Corp.Inventor: Kuo-Yuan Lee
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Patent number: 8093104Abstract: A multi-chip stacking method to reduce voids between stacked chips is revealed. A first chip is disposed on a substrate, and a plurality of first bonding wires are formed by wire bonding to electrically connect the first chip and the substrate. A second chip is disposed on an active surface of the first chip where a dielectric layer and a FOW adhesive (film over wire) adhesive are attached onto a back surface of the second chip. The FOW adhesive partially encapsulates the first bonding wires and adheres to the active surface of the first chip. Then, the substrate is placed in a pressure oven to provide a positive pressure greater than one atm during thermally curing the FOW adhesive with exerted pressures. Accordingly, voids can be reduced inside the FOW adhesive during the multi-chip stacked processes where issues of poor adhesion and popcorn between chips can be avoided.Type: GrantFiled: March 7, 2011Date of Patent: January 10, 2012Assignee: Walton Advanced Engineering, Inc.Inventors: Kuo-Yuan Lee, Yung-Hsiang Chen, Wen-Chun Chiu
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Publication number: 20100288090Abstract: A tool holding device is disposed between a headstock unit and a tailstock unit of a five-axis lathe, and includes a saddle driven to move longitudinally, a cross-slide riding on the saddle and driven to move transversely, a turntable platform disposed on a base mount that is disposed on the cross-slide and driven to revolve about an upright axis, and a tool post mounted on a base rest that is disposed on the turntable platform and driven to move uprightly. An indexable turret is disposed on the tool post for holding tool bits such that the five-axis lathe can perform movements about five axes to machine a workpiece so as to obtain a complicated geometric shape, thereby reducing setup time and errors and increasing production.Type: ApplicationFiled: April 5, 2010Publication date: November 18, 2010Applicant: WEY YII CORP.Inventor: Kuo-Yuan Lee
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Publication number: 20100219521Abstract: A window-type semiconductor package is revealed, primarily comprising a substrate with an interconnection channel, a chip on the substrate, a die-attach adhesive between the chip and the substrate, and an encapsulant filling the interconnection channel. A first solder mask formed on the top surface of the substrate has a specific pattern. The die-attach adhesive bonds the active surface of the chip to the first solder mask with the bonding pads of the chip aligned inside the interconnection channel. The first solder mask has an opening to expose the interconnection channel and further to form an indentation from the interconnection channel to expose the top surface to prevent damaging of the active surface of the chip adjacent to the edges of the interconnection channel to ensure the integrity and yield of the final products.Type: ApplicationFiled: May 8, 2009Publication date: September 2, 2010Inventors: Kuo-Yuan LEE, Yung-Hsiang Chen, Wen-Chun Chiu
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Patent number: 7768112Abstract: A method for cutting and molding in small windows of a window-type semiconductor package and the semiconductor package fabricated from the same are revealed. According to the method, a substrate strip has a plurality of small windows disposed at the sides or at the corners of the substrate strip. The external surface of the substrate strip includes a plurality of window molding areas surrounding the small windows and extending to the scribe lines. A plurality of chips are disposed on the substrate strip. Then, an encapsulant is formed in the small windows to encapsulate the electrical connecting components and formed on the window molding areas so that the encapsulant extends to the scribe lines. Therefore, the mold flashes at the small windows can be effectively reduced.Type: GrantFiled: August 17, 2009Date of Patent: August 3, 2010Assignee: Walton Advanced Engineering Inc.Inventors: Kuo-Yuan Lee, Yung-Hsiang Chen
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Patent number: 7723157Abstract: A method for cutting and molding in small windows of a window-type semiconductor package and the semiconductor package fabricated from the same are revealed. According to the method, a substrate strip has a plurality of small windows disposed at the sides or at the corners of the substrate strip. The external surface of the substrate strip includes a plurality of window molding areas surrounding the small windows and extending to the scribe lines. A plurality of chips are disposed on the substrate strip. Then, an encapsulant is formed in the small windows to encapsulate the electrical connecting components and formed on the window molding areas so that the encapsulant extends to the scribe lines. Therefore, the mold flashes at the small windows can be effectively reduced.Type: GrantFiled: December 28, 2007Date of Patent: May 25, 2010Assignee: Walton Advanced Engineering, Inc.Inventors: Kuo-Yuan Lee, Yung-Hsiang Chen
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Publication number: 20090302446Abstract: A method for cutting and molding in small windows of a window-type semiconductor package and the semiconductor package fabricated from the same are revealed. According to the method, a substrate strip has a plurality of small windows disposed at the sides or at the corners of the substrate strip. The external surface of the substrate strip includes a plurality of window molding areas surrounding the small windows and extending to the scribe lines. A plurality of chips are disposed on the substrate strip. Then, an encapsulant is formed in the small windows to encapsulate the electrical connecting components and formed on the window molding areas so that the encapsulant extends to the scribe lines. Therefore, the mold flashes at the small windows can be effectively reduced.Type: ApplicationFiled: August 17, 2009Publication date: December 10, 2009Inventors: Kuo-Yuan LEE, Yung-Hsiang CHEN